Shaghayegh Aslanzadeh, A. Hedayatipour, Mst Shamim Ara Shawkat, N. Mcfarlane
{"title":"生物医学应用的差分低功率电压箝位ISFET拓扑","authors":"Shaghayegh Aslanzadeh, A. Hedayatipour, Mst Shamim Ara Shawkat, N. Mcfarlane","doi":"10.1109/DCAS.2018.8620183","DOIUrl":null,"url":null,"abstract":"Over the past few years, ion-sensitive field-effect transistors (ISFETs) have played a major role in chemical detection systems. This paper presents an architecture for an ultra-low power CMOS pH sensor suitable for biomedical applications. The design uses a differential ISFET readout circuit operating at 0.9V power supply. The minimum supply voltage and minimum power consumption are achieved by operating the MOSFETs in subthreshold regions. The novelty of this design lies in using different size sensing gate areas in a differential voltage clamping ISFET topology. The ISFET model is derived from experimental measurements. Simulation results of the circuit in a 0.5µm standard CMOS process show that the designed differential ISFET provides an average sensitivity −49mV/pH with ISFET sensing areas of 80µm×80µm and 10µm×10µm over a 1-14pH range with 2.3nW of power.","PeriodicalId":320317,"journal":{"name":"2018 IEEE 13th Dallas Circuits and Systems Conference (DCAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Differential Low-Power Voltage-Clamped ISFET Topology for Biomedical Applications\",\"authors\":\"Shaghayegh Aslanzadeh, A. Hedayatipour, Mst Shamim Ara Shawkat, N. Mcfarlane\",\"doi\":\"10.1109/DCAS.2018.8620183\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Over the past few years, ion-sensitive field-effect transistors (ISFETs) have played a major role in chemical detection systems. This paper presents an architecture for an ultra-low power CMOS pH sensor suitable for biomedical applications. The design uses a differential ISFET readout circuit operating at 0.9V power supply. The minimum supply voltage and minimum power consumption are achieved by operating the MOSFETs in subthreshold regions. The novelty of this design lies in using different size sensing gate areas in a differential voltage clamping ISFET topology. The ISFET model is derived from experimental measurements. Simulation results of the circuit in a 0.5µm standard CMOS process show that the designed differential ISFET provides an average sensitivity −49mV/pH with ISFET sensing areas of 80µm×80µm and 10µm×10µm over a 1-14pH range with 2.3nW of power.\",\"PeriodicalId\":320317,\"journal\":{\"name\":\"2018 IEEE 13th Dallas Circuits and Systems Conference (DCAS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 13th Dallas Circuits and Systems Conference (DCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DCAS.2018.8620183\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 13th Dallas Circuits and Systems Conference (DCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DCAS.2018.8620183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Differential Low-Power Voltage-Clamped ISFET Topology for Biomedical Applications
Over the past few years, ion-sensitive field-effect transistors (ISFETs) have played a major role in chemical detection systems. This paper presents an architecture for an ultra-low power CMOS pH sensor suitable for biomedical applications. The design uses a differential ISFET readout circuit operating at 0.9V power supply. The minimum supply voltage and minimum power consumption are achieved by operating the MOSFETs in subthreshold regions. The novelty of this design lies in using different size sensing gate areas in a differential voltage clamping ISFET topology. The ISFET model is derived from experimental measurements. Simulation results of the circuit in a 0.5µm standard CMOS process show that the designed differential ISFET provides an average sensitivity −49mV/pH with ISFET sensing areas of 80µm×80µm and 10µm×10µm over a 1-14pH range with 2.3nW of power.