C. Zervos, A. Bairamis, A. Adikimenakis, A. Kostopoulos, M. Kayambaki, K. Tsagaraki, G. Konstantinidis, A. Georgakilas
{"title":"AlN/GaN/AlN双异质结构","authors":"C. Zervos, A. Bairamis, A. Adikimenakis, A. Kostopoulos, M. Kayambaki, K. Tsagaraki, G. Konstantinidis, A. Georgakilas","doi":"10.1109/ASDAM.2014.6998659","DOIUrl":null,"url":null,"abstract":"AlN/GaN/AlN double heterostructures grown by PAMBE on sapphire (0001) substrates with different AlN top barrier thicknesses, ranging between 1.5 and 4 nm, were investigated. The two-dimensional electron gas (2DEG) density increased with AlN barrier thickness in agreement with the theoretical values. The highest value of 2.2×1013 cm-2 for the HEMT structure with 4.5 nm AlN barrier thickness and the highest mobility of 900 cm2/Vs for the structure with 3 nm AlN barrier thickness were obtained. HEMT devices, processed with a gate length of 1μm, exhibited a maximum drain current of 1.1 A/mm for 3 and 3.7 nm AlN barrier thickness. The transistor threshold voltage scaled linearly from +0.2V to-2.7V by varying the AlN barrier thickness from 1.5 nm to 4.5 nm respectively showing a normally-off potential use.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"AlN/GaN/AlN double heterostructures with thin AlN top barriers\",\"authors\":\"C. Zervos, A. Bairamis, A. Adikimenakis, A. Kostopoulos, M. Kayambaki, K. Tsagaraki, G. Konstantinidis, A. Georgakilas\",\"doi\":\"10.1109/ASDAM.2014.6998659\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlN/GaN/AlN double heterostructures grown by PAMBE on sapphire (0001) substrates with different AlN top barrier thicknesses, ranging between 1.5 and 4 nm, were investigated. The two-dimensional electron gas (2DEG) density increased with AlN barrier thickness in agreement with the theoretical values. The highest value of 2.2×1013 cm-2 for the HEMT structure with 4.5 nm AlN barrier thickness and the highest mobility of 900 cm2/Vs for the structure with 3 nm AlN barrier thickness were obtained. HEMT devices, processed with a gate length of 1μm, exhibited a maximum drain current of 1.1 A/mm for 3 and 3.7 nm AlN barrier thickness. The transistor threshold voltage scaled linearly from +0.2V to-2.7V by varying the AlN barrier thickness from 1.5 nm to 4.5 nm respectively showing a normally-off potential use.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998659\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
AlN/GaN/AlN double heterostructures with thin AlN top barriers
AlN/GaN/AlN double heterostructures grown by PAMBE on sapphire (0001) substrates with different AlN top barrier thicknesses, ranging between 1.5 and 4 nm, were investigated. The two-dimensional electron gas (2DEG) density increased with AlN barrier thickness in agreement with the theoretical values. The highest value of 2.2×1013 cm-2 for the HEMT structure with 4.5 nm AlN barrier thickness and the highest mobility of 900 cm2/Vs for the structure with 3 nm AlN barrier thickness were obtained. HEMT devices, processed with a gate length of 1μm, exhibited a maximum drain current of 1.1 A/mm for 3 and 3.7 nm AlN barrier thickness. The transistor threshold voltage scaled linearly from +0.2V to-2.7V by varying the AlN barrier thickness from 1.5 nm to 4.5 nm respectively showing a normally-off potential use.