{"title":"了解模拟设计中的MOSFET失配","authors":"P. Drennan, C. McAndrew","doi":"10.1109/CICC.2002.1012872","DOIUrl":null,"url":null,"abstract":"This paper addresses misconceptions about MOSFET mismatch for analog design. V/sub t/ mismatch does not follow a simplistic 1/(/spl radic/area) law, especially for wide/short and narrow/long devices, which are common geometries in analog circuits. Further, Vt and gain factor are not appropriate parameters for modeling mismatch. A physically based mismatch model can be used to obtain dramatic improvements in the prediction of mismatch. This model is applied to MOSFET current mirrors to show some non-obvious effects over bias, geometry, and multiple unit devices.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"324","resultStr":"{\"title\":\"Understanding MOSFET mismatch for analog design\",\"authors\":\"P. Drennan, C. McAndrew\",\"doi\":\"10.1109/CICC.2002.1012872\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper addresses misconceptions about MOSFET mismatch for analog design. V/sub t/ mismatch does not follow a simplistic 1/(/spl radic/area) law, especially for wide/short and narrow/long devices, which are common geometries in analog circuits. Further, Vt and gain factor are not appropriate parameters for modeling mismatch. A physically based mismatch model can be used to obtain dramatic improvements in the prediction of mismatch. This model is applied to MOSFET current mirrors to show some non-obvious effects over bias, geometry, and multiple unit devices.\",\"PeriodicalId\":209025,\"journal\":{\"name\":\"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"324\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2002.1012872\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2002.1012872","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper addresses misconceptions about MOSFET mismatch for analog design. V/sub t/ mismatch does not follow a simplistic 1/(/spl radic/area) law, especially for wide/short and narrow/long devices, which are common geometries in analog circuits. Further, Vt and gain factor are not appropriate parameters for modeling mismatch. A physically based mismatch model can be used to obtain dramatic improvements in the prediction of mismatch. This model is applied to MOSFET current mirrors to show some non-obvious effects over bias, geometry, and multiple unit devices.
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