Design and analysis of nano-scale bulk FinFETs

Design of 14 nm bulk FinFET is discussed and some properties are analyzed physically. The source/drain junction depth is the most important parameter to reduce off-current, and a punchthrough barrier of a peak concentration higher than ~2×1018 cm-3 should be formed just underneath the junction depth at the same time. Uniform body doping concentration needs to be designed to have a doping in the range of 2~4×1017 cm-3. The source/drain contact resistance can be reduced by increasing metal contact area on the source/drain region. The drain current fluctuation with the capture and emission of an electron in a trap inside the gate oxide is less than 2% at a VGS-Vth of 0.1 V, and increases slightly due to the increase of coupling as fin width decreases.