嵌入式SONOS非易失性存储单元中的数据保留行为

63rd Device Research Conference Digest, 2005. DRC '05. Pub Date : 2005-06-22 DOI:10.1109/DRC.2005.1553043

H. Chae, Y. Jung, S. Seo, J. Han, J. Hyun, G. W. Park, M.Y. Um, J. Kim, B.J. Lee, K. Kim, J. cho, G. Bae, N. Lee, S. Kang, C.W. Kim

{"title":"嵌入式SONOS非易失性存储单元中的数据保留行为","authors":"H. Chae, Y. Jung, S. Seo, J. Han, J. Hyun, G. W. Park, M.Y. Um, J. Kim, B.J. Lee, K. Kim, J. cho, G. Bae, N. Lee, S. Kang, C.W. Kim","doi":"10.1109/DRC.2005.1553043","DOIUrl":null,"url":null,"abstract":"In this paper, data retention loss phenomena after write/erase cycles and time in an embedded SONOS memory cell were investigated for the first time. By analyzing source junction leakage current, it was determined that the loss of holes in nitride also results in an increase in threshold voltage, a drop in ion, and a degradation of sub-threshold slope","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Data retention behavior in the embedded SONOS nonvolatile memory cell\",\"authors\":\"H. Chae, Y. Jung, S. Seo, J. Han, J. Hyun, G. W. Park, M.Y. Um, J. Kim, B.J. Lee, K. Kim, J. cho, G. Bae, N. Lee, S. Kang, C.W. Kim\",\"doi\":\"10.1109/DRC.2005.1553043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, data retention loss phenomena after write/erase cycles and time in an embedded SONOS memory cell were investigated for the first time. By analyzing source junction leakage current, it was determined that the loss of holes in nitride also results in an increase in threshold voltage, a drop in ion, and a degradation of sub-threshold slope\",\"PeriodicalId\":306160,\"journal\":{\"name\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"63rd Device Research Conference Digest, 2005. DRC '05.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2005.1553043\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文首次研究了嵌入式SONOS存储单元在写/擦除周期和时间后的数据保留丢失现象。通过对源结泄漏电流的分析，确定氮化物中空穴的损失也会导致阈值电压的升高、离子的下降和亚阈值斜率的下降

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Data retention behavior in the embedded SONOS nonvolatile memory cell

In this paper, data retention loss phenomena after write/erase cycles and time in an embedded SONOS memory cell were investigated for the first time. By analyzing source junction leakage current, it was determined that the loss of holes in nitride also results in an increase in threshold voltage, a drop in ion, and a degradation of sub-threshold slope

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

63rd Device Research Conference Digest, 2005. DRC '05.

自引率

0.00%

发文量

期刊最新文献

High-power stable field-plated AlGaN-GaN MOSHFETs A new four-terminal hybrid silicon/organic field-effect sensor device Tunnel junctions in GaN/AlN for optoelectronic applications Data retention behavior in the embedded SONOS nonvolatile memory cell Mobility and sub-threshold characteristics in high-mobility dual-channel strained Si/strainef SiGe p-MOSFETs