H. Chae, Y. Jung, S. Seo, J. Han, J. Hyun, G. W. Park, M.Y. Um, J. Kim, B.J. Lee, K. Kim, J. cho, G. Bae, N. Lee, S. Kang, C.W. Kim
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Data retention behavior in the embedded SONOS nonvolatile memory cell
In this paper, data retention loss phenomena after write/erase cycles and time in an embedded SONOS memory cell were investigated for the first time. By analyzing source junction leakage current, it was determined that the loss of holes in nitride also results in an increase in threshold voltage, a drop in ion, and a degradation of sub-threshold slope
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