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引用次数: 41

摘要

采用田口法对Epon SU-8负光刻胶的制备工艺进行了优化实验。这种光刻胶已被证明对工艺变化非常敏感,难以使用。田口法揭示了输出对控制因素变化的敏感性。以5个工艺参数为控制因素,进行了实验,并与理想输出特性进行了对比评价。分析结果,提出了一种制造工艺,通过优化控制因素,使所有输出的总平均值达到最佳。在50 /spl mu/m、100 /spl mu/m和220 /spl mu/m三种膜厚下重复试验。期望的输出特性是直的侧壁轮廓,精细的线条和空间分辨率,以及与基板的附着力。表格显示了这三种薄膜厚度的优化处理参数。
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Taguchi optimization for the processing of Epon SU-8 resist
Using the Taguchi technique an optimization experiment was performed to characterize the processing of Epon SU-8 negative photoresist. This photoresist has proven to be very sensitive to process variations and difficult to use. The Taguchi method reveals output sensitivity to variations in control factors. Using five processing parameters as control factors, experiments were performed and results were evaluated by comparison to ideal output characteristics. Analyzing the results, a proposed fabrication process was derived from optimizing the control factors for the best overall mean across all the outputs. The experiment was repeated for three film thicknesses: 50 /spl mu/m, 100 /spl mu/m,and 220 /spl mu/m. The desired output characteristics were straight sidewall profile, fine line and space resolution, and adhesion to substrate. Tables show optimized processing parameters for these three film thicknesses.
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