Diamond-Like Silicon-Carbon Films Preparation at Different Frequencies of Plasma-Chemical Decomposition

In this paper, a reactor is created for the preparation of amorphous diamond-like silicon-carbon films by the plasma enhanced chemical vapor deposition method at electric field frequencies from 100 kHz to 2 MHz and substrate-holder bias voltages from 100 to 2000 V. Silicon-carbon films is prepared in this electric field frequency range and a study was carried out their chemical composition, surface morphology, electrical and mechanical properties. The existing results are shown that the variation of the electric field frequency during the plasma-chemical decomposition of the precursor is an effective method for controlling the properties of silicon-carbon films at a constant chemical and phase composition of the material. The frequency ranges of the electric field are determined, which provide the maximum and minimum changes in the properties of the prepared films.