Liang-Wei Ouyang, J. Mayeda, C. Sweeney, G. Somasundaram, D. Lie, Jerry Lopez
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引用次数: 0
摘要
提出了一种基于22 nm全耗尽绝缘体上硅(FD-SOI) CMOS技术的宽带毫米波(mm-Wave)低噪声放大器(LNA)的设计。布局后寄生提取(PEX)仿真表明，LNA在16.9 ～ 41.8 GHz范围内具有3db带宽(BW)，分数带宽(FBW)为84.8 GHz %, covering the key frequency bands within the mm-Wave 5G FR2 band, with its noise figure (NF) ranging from 2.9 – 4.1 dB, and its input-referred 1-dB compression point (IP1dB) of −19.4 dBm at 28 GHz with 15.8 mW DC power consumption. Using the FOM (figure-of-merit) developed from Ref. [1] for broadband LNAs (FOM $\equiv\mathbf{2 0}\times\log((Gain[V / V]\times BW[GHz])/(P_{DC}[mW]\times(F-1))$, this LNA achieves a competitive FOM among reported mm-Wave LNAs in literature [1–7].
A Broadband Millimeter-Wave 5G Low Noise Amplifier Design in 22 nm Fully-Depleted Silicon-on-Insulator (FD-SOI) CMOS
This paper presents a design of a broadband millimeter-wave (mm-Wave) low noise amplifier (LNA) designed in a 22 nm fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. The post-layout parasitic extracted (PEX) simulations suggest the LNA has a 3-dB bandwidth (BW) from 16.9 – 41.8 GHz and a fractional bandwidth (FBW) of 84.8 %, covering the key frequency bands within the mm-Wave 5G FR2 band, with its noise figure (NF) ranging from 2.9 – 4.1 dB, and its input-referred 1-dB compression point (IP1dB) of −19.4 dBm at 28 GHz with 15.8 mW DC power consumption. Using the FOM (figure-of-merit) developed from Ref. [1] for broadband LNAs (FOM $\equiv\mathbf{2 0}\times\log((Gain[V / V]\times BW[GHz])/(P_{DC}[mW]\times(F-1))$, this LNA achieves a competitive FOM among reported mm-Wave LNAs in literature [1–7].
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