8.5一个0.42ps- 241.7dB-FOM可合成注入锁相环,具有隔离噪声的LDO

H. Ngo, K. Nakata, Toru Yoshioka, Y. Terashima, K. Okada, A. Matsuzawa
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引用次数: 22

摘要

本文提出了一种使用噪声隔离LDO的电源调节可合成注入锁相环(IL-PLL)。噪声隔离LDO实现时移操作,将PLL从电源和LDO噪声中隔离出来,因此即使在有噪声的SoC中,IL-PLL也保持鲁棒性。锁相环的核心布局仅使用代工厂提供的65nm CMOS工艺标准单元库和标准数字设计工具来实现。在可合成锁相环中,在0.9GHz振荡下,以3.8mW的功耗实现0.42ps的抖动性能。
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8.5 A 0.42ps-jitter −241.7dB-FOM synthesizable injection-locked PLL with noise-isolation LDO
This paper presents a supply regulated synthesizable injection-locked PLL (IL-PLL), using a noise-isolation LDO. The noise-isolation LDO realizes a time-shift operation to isolate the PLL from both supply and LDO noise, so the IL-PLL operation remains robust, even within a noisy SoC. The core layout of the PLL is implemented using solely a foundry provided standard-cell library for a 65nm CMOS process with standard digital design tools. Among synthesizable PLLs, jitter performance of 0.42ps is achieved with 3.8mW power consumption at 0.9GHz oscillation.
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