{"title":"统计大信号模型实现高功率放大器设计的良率优化","authors":"W. Stiebler, Pavlos Kolias, J. Sanctuary","doi":"10.1109/CSICS07.2007.25","DOIUrl":null,"url":null,"abstract":"A statistical large-signal model is presented that allows for optimizing yield of high-power amplifier MMICs. The modeling technique is based on the transformation of process control data into modeling parameters of an empirical, compact large-signal device model, followed by a multi-variant statistical analysis, resulting in a full set of principal components for both the current and the charge model. The model component has been implemented into ADS (Agilent) and an automated software periodically updates the statistical model parameters.","PeriodicalId":370697,"journal":{"name":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","volume":"279 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Statistical Large-Signal Model Enabling Yield Optimization in High-Power Amplifier Design\",\"authors\":\"W. Stiebler, Pavlos Kolias, J. Sanctuary\",\"doi\":\"10.1109/CSICS07.2007.25\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A statistical large-signal model is presented that allows for optimizing yield of high-power amplifier MMICs. The modeling technique is based on the transformation of process control data into modeling parameters of an empirical, compact large-signal device model, followed by a multi-variant statistical analysis, resulting in a full set of principal components for both the current and the charge model. The model component has been implemented into ADS (Agilent) and an automated software periodically updates the statistical model parameters.\",\"PeriodicalId\":370697,\"journal\":{\"name\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"volume\":\"279 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-11-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Compound Semiconductor Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS07.2007.25\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Compound Semiconductor Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS07.2007.25","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Statistical Large-Signal Model Enabling Yield Optimization in High-Power Amplifier Design
A statistical large-signal model is presented that allows for optimizing yield of high-power amplifier MMICs. The modeling technique is based on the transformation of process control data into modeling parameters of an empirical, compact large-signal device model, followed by a multi-variant statistical analysis, resulting in a full set of principal components for both the current and the charge model. The model component has been implemented into ADS (Agilent) and an automated software periodically updates the statistical model parameters.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
