Benqing Guo, Haishi Wang, Yao Wang, Kenneth K. Li, Lei Li, Wanting Zhou
{"title":"在65nm CMOS中实现200mhz中频带宽的阻性反馈基带混合器优先接收器前端","authors":"Benqing Guo, Haishi Wang, Yao Wang, Kenneth K. Li, Lei Li, Wanting Zhou","doi":"10.1109/RFIC54546.2022.9863101","DOIUrl":null,"url":null,"abstract":"A mixer-first receiver frontend with resistive-feedback baseband is proposed. The baseband combination of Gm and transimpedance amplifier (TIA) is designed to cover a wide frequency range for high data rate applications. The N-path filtering at the RF side and enhanced filtering at the BB side inhibit out-of-band blocker interferences. The receiver is fabricated in a 65 nm CMOS. Measurement results display an NF of 2.3 dB and a conversion gain of 33.5 dB at 2 GHz fLO. The in-band and out-of-band IIP3 are −7.5 dBm and 19 dBm respectively. The receiver core draws 34 mW in the signal path and occupies an active area of 0.31 mm2.","PeriodicalId":415294,"journal":{"name":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A Mixer-First Receiver Frontend with Resistive-Feedback Baseband Achieving 200 MHz IF Bandwidth in 65 nm CMOS\",\"authors\":\"Benqing Guo, Haishi Wang, Yao Wang, Kenneth K. Li, Lei Li, Wanting Zhou\",\"doi\":\"10.1109/RFIC54546.2022.9863101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A mixer-first receiver frontend with resistive-feedback baseband is proposed. The baseband combination of Gm and transimpedance amplifier (TIA) is designed to cover a wide frequency range for high data rate applications. The N-path filtering at the RF side and enhanced filtering at the BB side inhibit out-of-band blocker interferences. The receiver is fabricated in a 65 nm CMOS. Measurement results display an NF of 2.3 dB and a conversion gain of 33.5 dB at 2 GHz fLO. The in-band and out-of-band IIP3 are −7.5 dBm and 19 dBm respectively. The receiver core draws 34 mW in the signal path and occupies an active area of 0.31 mm2.\",\"PeriodicalId\":415294,\"journal\":{\"name\":\"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC54546.2022.9863101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC54546.2022.9863101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Mixer-First Receiver Frontend with Resistive-Feedback Baseband Achieving 200 MHz IF Bandwidth in 65 nm CMOS
A mixer-first receiver frontend with resistive-feedback baseband is proposed. The baseband combination of Gm and transimpedance amplifier (TIA) is designed to cover a wide frequency range for high data rate applications. The N-path filtering at the RF side and enhanced filtering at the BB side inhibit out-of-band blocker interferences. The receiver is fabricated in a 65 nm CMOS. Measurement results display an NF of 2.3 dB and a conversion gain of 33.5 dB at 2 GHz fLO. The in-band and out-of-band IIP3 are −7.5 dBm and 19 dBm respectively. The receiver core draws 34 mW in the signal path and occupies an active area of 0.31 mm2.