SOI部分耗尽(PD)动态阈值MOS (DTMOS)器件的短通道效应

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI:10.1109/HKEDM.2000.904213

S. Lin, K. Yuan, J. Kuo

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引用次数: 1

摘要

本文利用准二维方法推导的紧凑模型和MEDICI二维仿真，研究了SOI部分耗尽(PD)动态阈值MOS (DTMOS)器件的短通道效应。基于解析模型，二维仿真结果验证了DTMOS器件具有较小的短通道效应，包括漏极诱导的降势垒(DIBL)诱导的短通道效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices

This paper presents short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices using a compact model derived from a quasi-2D approach and MEDICI 2D simulation. Based on the analytical model, as verified by the 2D simulation results, the DTMOS device has less short channel effects including drain-induced-barrier-lowering (DIBL)-induced short channel effects.

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Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)

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