Xian-jie Li, J. Ao, Rong Wang, Wei-Ji Liu, Zhigong Wang, Q. Zeng, Shiyong Liu, Chun-Guang Liang
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An 850 nm wavelength monolithic integrated photoreceiver with a single-power-supplied transimpedance amplifier based on GaAs PHEMT technology
An 850 nm wavelength monolithic integrated photoreceiver with a novel single-power-supplied transimpedance amplifier is reported based on 0.8 /spl mu/m depleted GaAs PHEMT technology. The IC consists of an MSM photodetector and a transimpedance amplifier with a 50 ohm-matched differential output. The MSM PD on the chip shows a dark current of 2.0 nA as well as a responsivity of 0.30 A/W under a bias of 3.5 V. The TIA shows a transimpedance gain of more than 58 dB/spl Omega/ with a -3 dB bandwidth of 2.0 GHz. Opening eye diagrams are demonstrated at bit-rates of 1.25 Gbit/s and 2.5 Gbit/s under a +5 V supply.
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