A. Kosa, L. Stuchlíková, P. Benko, J. Jakus, L. Harmatha, J. Kováč, B. Ściana, W. Dawidowski, D. Radziewicz, D. Pucicki, M. Tlaczala
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DLTS study of electrically active defects in triple quantum well InGaAsN/GaAs heterostructures
Deep Level Transient Fourier Spectroscopy study of charge carrier emission from quantum wells and electrically active defects in triple quantum well InGaAsN/GaAs heterostructures is discussed. Main attention is focused on the comparison and evaluation of measured spectra and to state the conditions of quantum well charge carrier emission identification. The presence of several deep energy levels and their parameters typical for GaAs are reported.
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