通过优化排列良率来降低LSI芯片成本

W. Lynch
{"title":"通过优化排列良率来降低LSI芯片成本","authors":"W. Lynch","doi":"10.1109/IEDM.1977.189140","DOIUrl":null,"url":null,"abstract":"The area of an LSI chip depends not only on the minimum dimensions for the lines and spacings, but also on the realignment tolerances that are required in order to either assure or prevent an overlap for features on separate levels. Normal distributions are assumed for the misalignments and the feature sizes. A normalized solution is derived for the nominal size of each feature as a function of the alignment yield and of the standard deviations for misalignment and feature size. Applications and tradeoff examples are discussed. A simple cost model is examined in which it is shown that the larger the chip size the lower the alignment yields should be.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"The reduction of LSI chip costs by optimizing the alignment yields\",\"authors\":\"W. Lynch\",\"doi\":\"10.1109/IEDM.1977.189140\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The area of an LSI chip depends not only on the minimum dimensions for the lines and spacings, but also on the realignment tolerances that are required in order to either assure or prevent an overlap for features on separate levels. Normal distributions are assumed for the misalignments and the feature sizes. A normalized solution is derived for the nominal size of each feature as a function of the alignment yield and of the standard deviations for misalignment and feature size. Applications and tradeoff examples are discussed. A simple cost model is examined in which it is shown that the larger the chip size the lower the alignment yields should be.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189140\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

LSI芯片的面积不仅取决于线和间距的最小尺寸,还取决于为了确保或防止不同层上的特征重叠所需的重新调整公差。对于不对齐和特征大小,假设正态分布。对于每个特征的标称尺寸,导出了一个归一化的解决方案,该解决方案是对准率和不对准和特征尺寸的标准偏差的函数。讨论了应用程序和权衡示例。一个简单的成本模型进行了检查,其中显示,更大的芯片尺寸,更低的对准产量应该是。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
The reduction of LSI chip costs by optimizing the alignment yields
The area of an LSI chip depends not only on the minimum dimensions for the lines and spacings, but also on the realignment tolerances that are required in order to either assure or prevent an overlap for features on separate levels. Normal distributions are assumed for the misalignments and the feature sizes. A normalized solution is derived for the nominal size of each feature as a function of the alignment yield and of the standard deviations for misalignment and feature size. Applications and tradeoff examples are discussed. A simple cost model is examined in which it is shown that the larger the chip size the lower the alignment yields should be.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Anodic oxidation of GaAs in oxygen plasma Life begins at forty: Microwave tubes Multi-anode microchannel arrays Gunn effect high-speed carry finding device for 8-bit binary adder New type of varactor diode having strongly nonlinear C-V characteristics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1