{"title":"提高3-D NAND快闪记忆体的电离辐射耐受性","authors":"B. Ray, Matchima Buddhanoy, Mondol Anik Kumar","doi":"10.1109/IMW56887.2023.10145957","DOIUrl":null,"url":null,"abstract":"In this paper we present characterization results of total ionizing dose (TID) effects on commercial 3-D NAND memory. We show the TID induced threshold voltage shift and bit error rate of the memory array. Based on the characterization results we present four system-level techniques that can mitigate TID effects of the commercial 3-D NAND memory.","PeriodicalId":153429,"journal":{"name":"2023 IEEE International Memory Workshop (IMW)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory\",\"authors\":\"B. Ray, Matchima Buddhanoy, Mondol Anik Kumar\",\"doi\":\"10.1109/IMW56887.2023.10145957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present characterization results of total ionizing dose (TID) effects on commercial 3-D NAND memory. We show the TID induced threshold voltage shift and bit error rate of the memory array. Based on the characterization results we present four system-level techniques that can mitigate TID effects of the commercial 3-D NAND memory.\",\"PeriodicalId\":153429,\"journal\":{\"name\":\"2023 IEEE International Memory Workshop (IMW)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW56887.2023.10145957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW56887.2023.10145957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory
In this paper we present characterization results of total ionizing dose (TID) effects on commercial 3-D NAND memory. We show the TID induced threshold voltage shift and bit error rate of the memory array. Based on the characterization results we present four system-level techniques that can mitigate TID effects of the commercial 3-D NAND memory.
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