{"title":"模具附着环氧树脂污染下CF4/O2等离子体加速塑料封装集成电路铝金属化腐蚀","authors":"R. Ritchie, D. Andrews","doi":"10.1109/IRPS.1981.362979","DOIUrl":null,"url":null,"abstract":"Corrosion rates, in autoclave, of aluminum bonding pad metallization in plastic encapsulated packages were studied as a function of die attach materials. The failure rate for chlorine contaminated die attach epoxies was enhanced if the pad metallization had prior exposure to carbon tetrafluoride/oxygen plasma. Eutectically attached devices exposed to CF4/O2 demonstrated increased failure rates. These rates were found to vary with length of exposure.","PeriodicalId":376954,"journal":{"name":"19th International Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"CF4/O2 Plasma Accelerated Aluminum Metallization Corrosion in Plastic Encapsulated ICs in the Presence of Contaminated Die Attach Epoxies\",\"authors\":\"R. Ritchie, D. Andrews\",\"doi\":\"10.1109/IRPS.1981.362979\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Corrosion rates, in autoclave, of aluminum bonding pad metallization in plastic encapsulated packages were studied as a function of die attach materials. The failure rate for chlorine contaminated die attach epoxies was enhanced if the pad metallization had prior exposure to carbon tetrafluoride/oxygen plasma. Eutectically attached devices exposed to CF4/O2 demonstrated increased failure rates. These rates were found to vary with length of exposure.\",\"PeriodicalId\":376954,\"journal\":{\"name\":\"19th International Reliability Physics Symposium\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"19th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1981.362979\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1981.362979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CF4/O2 Plasma Accelerated Aluminum Metallization Corrosion in Plastic Encapsulated ICs in the Presence of Contaminated Die Attach Epoxies
Corrosion rates, in autoclave, of aluminum bonding pad metallization in plastic encapsulated packages were studied as a function of die attach materials. The failure rate for chlorine contaminated die attach epoxies was enhanced if the pad metallization had prior exposure to carbon tetrafluoride/oxygen plasma. Eutectically attached devices exposed to CF4/O2 demonstrated increased failure rates. These rates were found to vary with length of exposure.