增强晶圆分析使用测试，发射和软件网络跟踪的组合

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232600

R. Portune, I. Kapilevich, H. Deslandes, R. Nicholson, L. Forli, M. Thétiot, S. Posson, B. Picart

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摘要

我们描述了一种晶圆分析方法，该方法使用测试数据、发射数据和CAD数据来准确预测缺陷的位置和类型。所描述的方法使我们能够在进行破坏性物理分析之前了解金属层信息和缺陷类型的位置。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Enhanced wafer analysis using a combination of test, emission and software net tracing

We describe a wafer analysis methodology which uses test data, emission data and CAD data to accurately predict the location and type of defect. The methodology described enabled us to know the location with metal layer information and type of defect before performing destructive physical analysis.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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