Lu Yuxiang, Li Zekun, Yu Jiayang, Li Huanbo, Zhou Peigen, Lu Haiyan, Chen Jixin
{"title":"一种52.5GHz-66GHz高转换增益三倍频器。\\mu \\text{m SiGe}$ HBT进程","authors":"Lu Yuxiang, Li Zekun, Yu Jiayang, Li Huanbo, Zhou Peigen, Lu Haiyan, Chen Jixin","doi":"10.1109/IWS55252.2022.9977771","DOIUrl":null,"url":null,"abstract":"A 52.5GHz-66GHz frequency tripler using $0.13\\mu\\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\\mathrm{P}_{\\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7% relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\\mu\\mathrm{m}\\times 200\\mu\\mathrm{m}$ without pads and $880\\mu\\mathrm{m}\\times520\\mu\\mathrm{m}$ altogether.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\\\\mu \\\\text{m SiGe}$ HBT process\",\"authors\":\"Lu Yuxiang, Li Zekun, Yu Jiayang, Li Huanbo, Zhou Peigen, Lu Haiyan, Chen Jixin\",\"doi\":\"10.1109/IWS55252.2022.9977771\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 52.5GHz-66GHz frequency tripler using $0.13\\\\mu\\\\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\\\\mathrm{P}_{\\\\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7% relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\\\\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\\\\mu\\\\mathrm{m}\\\\times 200\\\\mu\\\\mathrm{m}$ without pads and $880\\\\mu\\\\mathrm{m}\\\\times520\\\\mu\\\\mathrm{m}$ altogether.\",\"PeriodicalId\":126964,\"journal\":{\"name\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"133 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-08-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS55252.2022.9977771\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS55252.2022.9977771","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13\mu \text{m SiGe}$ HBT process
A 52.5GHz-66GHz frequency tripler using $0.13\mu\mathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(\mathrm{P}_{\text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7% relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180\pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620\mu\mathrm{m}\times 200\mu\mathrm{m}$ without pads and $880\mu\mathrm{m}\times520\mu\mathrm{m}$ altogether.