基于分布PIN模型的香料IGBT模型

Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006. Pub Date : 2006-06-22 DOI:10.1109/MIXDES.2006.1706653

L. Starzak, A. Napieralski

{"title":"基于分布PIN模型的香料IGBT模型","authors":"L. Starzak, A. Napieralski","doi":"10.1109/MIXDES.2006.1706653","DOIUrl":null,"url":null,"abstract":"There is a growing need for power device models that would be both accurate and fast. A pin diode model developed earlier and implemented in Berkeley SPICE through code modification is used to design a simple IGBT model that fulfills these requirements. The approach adopted in this work is also applicable to other power semiconductor devices that contain the wide and lightly doped base layer","PeriodicalId":318768,"journal":{"name":"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.","volume":"2016 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new IGBT model based on distribution PIN model for spice\",\"authors\":\"L. Starzak, A. Napieralski\",\"doi\":\"10.1109/MIXDES.2006.1706653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There is a growing need for power device models that would be both accurate and fast. A pin diode model developed earlier and implemented in Berkeley SPICE through code modification is used to design a simple IGBT model that fulfills these requirements. The approach adopted in this work is also applicable to other power semiconductor devices that contain the wide and lightly doped base layer\",\"PeriodicalId\":318768,\"journal\":{\"name\":\"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.\",\"volume\":\"2016 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIXDES.2006.1706653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIXDES.2006.1706653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

对既准确又快速的功率器件模型的需求日益增长。一个早期开发的引脚二极管模型，在伯克利SPICE通过代码修改实现，用于设计一个简单的IGBT模型，满足这些要求。本研究采用的方法也适用于其他含有宽且轻掺杂基层的功率半导体器件

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A new IGBT model based on distribution PIN model for spice

There is a growing need for power device models that would be both accurate and fast. A pin diode model developed earlier and implemented in Berkeley SPICE through code modification is used to design a simple IGBT model that fulfills these requirements. The approach adopted in this work is also applicable to other power semiconductor devices that contain the wide and lightly doped base layer

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Proceedings of the International Conference Mixed Design of Integrated Circuits and System, 2006. MIXDES 2006.

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