An Extended Method to Analyze Boron Diffusion Defects in 16 nm Node High-Voltage FinFETs

This work proposed extended methods, which can analyze kinds of defects more easily with power spectrum density (PSD) and weighted time lag plot (W-TLP), to decouple single or multi-traps. To get additional high voltage tolerance, it is common to design different kinds of structures dispersing the electric field. In this work, boron and fluorine were doped in the source and drain extension regions to achieve higher voltage operation. However, boron diffusion could worsen the interface quality. Interestingly, after different stress conditions of hot carrier degradation (HCD) and positive bias temperature instability (PBTI), the degradation trends of the two devices show opposite behaviors. It is because the boron can bear the high voltage operation, but also weak the devices’ interface quality. Therefore, to analyze the influence of these defects plays an important role. With Agilent B1530A WGFMU and RTSDataAnalysis software, varied defects response to frequency can be simply detected. It can also use W-TLP to decouple single trap and multi-traps behaviors at the same time.