{"title":"原子氢退火法还原氧化石墨烯","authors":"A. Heya, N. Matsuo","doi":"10.1109/AM-FPD.2016.7543614","DOIUrl":null,"url":null,"abstract":"Effect of atomic hydrogen annealing (AHA) on graphene oxide (GO) was investigated. In AHA, the high-density atomic hydrogen is generated on heated tungsten (W) surface by catalytic cracking reaction. From X-ray photoelectron spectra, GO films were reduced by AHA. The sheet resistance of the GO film was decreased by 5 orders of magnitude at W mesh temperature of 1780 °C, sample temperature of 220 °C and treatment time of 1800 s. The reduction of GO films relates chemical reaction due to atomic hydrogen because the GO films was not reduced by He treatment. The C-O-C bonds in GO films were preferentially reduced by AHA.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reduction of graphene oxide by atomic hydrogen annealing\",\"authors\":\"A. Heya, N. Matsuo\",\"doi\":\"10.1109/AM-FPD.2016.7543614\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effect of atomic hydrogen annealing (AHA) on graphene oxide (GO) was investigated. In AHA, the high-density atomic hydrogen is generated on heated tungsten (W) surface by catalytic cracking reaction. From X-ray photoelectron spectra, GO films were reduced by AHA. The sheet resistance of the GO film was decreased by 5 orders of magnitude at W mesh temperature of 1780 °C, sample temperature of 220 °C and treatment time of 1800 s. The reduction of GO films relates chemical reaction due to atomic hydrogen because the GO films was not reduced by He treatment. The C-O-C bonds in GO films were preferentially reduced by AHA.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543614\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543614","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reduction of graphene oxide by atomic hydrogen annealing
Effect of atomic hydrogen annealing (AHA) on graphene oxide (GO) was investigated. In AHA, the high-density atomic hydrogen is generated on heated tungsten (W) surface by catalytic cracking reaction. From X-ray photoelectron spectra, GO films were reduced by AHA. The sheet resistance of the GO film was decreased by 5 orders of magnitude at W mesh temperature of 1780 °C, sample temperature of 220 °C and treatment time of 1800 s. The reduction of GO films relates chemical reaction due to atomic hydrogen because the GO films was not reduced by He treatment. The C-O-C bonds in GO films were preferentially reduced by AHA.
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