采用32nm CMOS技术设计的差分LC-VCO中上转换闪烁噪声的降低

D. Ponton, G. Knoblinger, A. Roithmeier, M. Tiebout, M. Fulde, P. Palestri
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摘要

本文讨论了用于GSM应用的LC压控振荡器(LC- vco)的设计,该振荡器采用最先进的32nm平面CMOS技术实现。标准VCO与具有尾部去耦的拓扑结构进行了比较,据我们所知,后者首次用于宽调谐范围应用(即以3.65GHz为中心的700MHz)。通过降低开关对在1/ f3区域引入的闪烁噪声的影响,去耦VCO显著降低了相位噪声,最高可达9dB,与标准VCO相比,具有相当的电流消耗和调谐范围。
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Reduction of up-converted flicker noise in differential LC-VCO designed in 32nm CMOS technology
This paper deals with the design of LC Voltage Controlled Oscillator (LC-VCO) for GSM applications, implemented in a state-of-the-art 32nm Planar CMOS technology. A standard VCO is compared with a topology featuring tail decoupling, which, to best of our knowledge, is used for the first time for a wide tuning-range application (i.e. 700MHz centered at 3.65GHz). The Decoupled VCO significantly reduces the Phase-Noise, up to 9dB, by lowering the impact of the flicker noise introduced by the switching-pair on the 1/ f 3 region, with comparable current consumption and tuning-range with respect to the standard VCO.
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