Carbon-doped InxGa1−xAs1−ySby on InP grown by metal-organic chemical vapor deposition

This paper reports metal-organic chemical vapor deposition (MOCVD) growth of undoped and C-doped InxGa1−xAs1−ySby on (001) InP substrates for the first time. We investigated the relationship between the InxGa1−xAs1−ySby alloy composition and molar flow ratio of group-III and group-V precursors in both undoped and C-doped InxGa1−xAs1−ySby and found a characteristic etching effect caused by the decomposition of carbon tetrabromide (CBr4). C-doped InGaAsSb films with high hole concentrations of over 2×10¹⁹ cm⁻³ were obtained for the In composition of less or equal to 0.10. The effect of hydrogen passivation of C-acceptors in C-doped InGaAsSb was negligibly small and similar to that in C-doped GaAsSb.