{"title":"单片x波段e类功率放大器","authors":"R. Tayrani","doi":"10.1109/GAAS.2001.964379","DOIUrl":null,"url":null,"abstract":"This paper describes what is believed to be the first successful design and fabrication of a broadband monolithic high efficiency class-E driver amplifier that operates at X-band and employs a 0.3 /spl mu/m /spl times/600 /spl mu/m pHEMT device. The amplifier's measured performance shows a peak Power Added Efficiency (PAE) of 63% at 10.6 GHz and a constant output power of greater than 24 dBm together with a gain of 10 dB over 9-11 GHz.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"A monolithic X-band class-E power amplifier\",\"authors\":\"R. Tayrani\",\"doi\":\"10.1109/GAAS.2001.964379\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes what is believed to be the first successful design and fabrication of a broadband monolithic high efficiency class-E driver amplifier that operates at X-band and employs a 0.3 /spl mu/m /spl times/600 /spl mu/m pHEMT device. The amplifier's measured performance shows a peak Power Added Efficiency (PAE) of 63% at 10.6 GHz and a constant output power of greater than 24 dBm together with a gain of 10 dB over 9-11 GHz.\",\"PeriodicalId\":269944,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2001.964379\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964379","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper describes what is believed to be the first successful design and fabrication of a broadband monolithic high efficiency class-E driver amplifier that operates at X-band and employs a 0.3 /spl mu/m /spl times/600 /spl mu/m pHEMT device. The amplifier's measured performance shows a peak Power Added Efficiency (PAE) of 63% at 10.6 GHz and a constant output power of greater than 24 dBm together with a gain of 10 dB over 9-11 GHz.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
