碳纳米管场效应晶体管技术中用于逐次逼近寄存器ADC应用的节能动态比较器

IF 1 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Iet Circuits Devices & Systems Pub Date : 2022-03-02 DOI:10.1049/cds2.12112
Hamid Mahmoodian, Mehdi Dolatshahi, S. Mohammadali Zanjani, Mohammad Amin Honarvar
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引用次数: 2

摘要

在碳纳米管场效应晶体管(CNTFET)技术中,提出了一种基于锁存器的节能动态比较器。所提出的比较器由两个主要级组成:前置放大器和锁存器。锁存器设计的主要目的是为了实现低功耗和高速性能。所提出的锁存器结构加速技术控制交叉耦合逆变器的阈值电压。因此,锁存阶段的延迟减少,因此,比较器电路的总延迟也减少了19.4%,而与传统的双尾动态比较器相比,所提出的比较器的最大速度性能提高了54%。此外,与传统的双尾动态比较器相比,在锁存阶段使用所提出的尾部晶体管的独特结构,可使所提出电路的每次转换能量减少11%以上。为了验证电路的性能,采用32 nm CNTFET斯坦福模型技术参数在HSPICE中对比较器电路进行了仿真。仿真结果表明,在电源电压为1 V时,采用加速方法的比较器工作频率可达14.2 GHz,灵敏度为30 μV,功耗仅为42.38 μW。因此,所提出的比较器可用于高分辨率(高达12位)和高速低功耗模数转换器应用。此外,本文还研究了非理想制造工艺(包括节距和阈值电压变化)、电源电压和温度变化的影响。蒙特卡罗分析表明,偏置电压的标准差约为1.24 mV。最后,比较器的反扰噪声为80 μV,与其他已报道的比较器电路相比较,表明该比较器电路具有良好的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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An energy-efficient dynamic comparator in Carbon Nanotube Field Effect Transistor technology for successive approximation register ADC applications

In this paper, a latch-based energy-efficient dynamic comparator is presented in Carbon Nanotube Field Effect Transistor (CNTFET) technology. The proposed comparator consists of two main stages: pre-amplifier and latch. The latch stage is designed for the main purpose of low-power consumption and high-speed performances. The proposed speed-up technique for the latch structure controls the threshold voltage (Vth) of the cross-coupled inverters. So, the delay of the latch stage decreases and consequently, the overall delay of the comparator circuit is also reduced up to 19.4% while the maximum speed performance of the proposed comparator increases by 54% compared to the conventional double-tail dynamic comparator. Additionally, the use of the proposed distinctive structure for the tail transistors in the latch stage, leads to more than 11% reduction in the energy per conversion of the proposed circuit compared to the conventional double-tail dynamic comparator. To verify the circuit performances, the comparator circuit is simulated in HSPICE using 32 nm CNTFET Stanford model technology parameters. The simulation results show that the proposed comparator with the proposed speed-up approach can operate up to 14.2 GHz with a sensitivity of 30 μV at the supply voltage of 1 V, while consumes only 42.38 μW of power. Therefore, the proposed comparator can be used in high-resolution (up to 12 bit) and high-speed low-power analogue-to-digital converter applications. Moreover, the effects of the non-ideal fabrication process (including the pitch and the threshold voltage variations), supply voltage and temperature variations are investigated in this work. Monte-Carlo analysis shows that the standard deviation of the offset voltage is approximately 1.24 mV. Finally, the kickback noise of the proposed comparator is obtained as 80 μV, which shows the proper performance of the proposed comparator circuit in comparison with other reported designs.

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来源期刊
Iet Circuits Devices & Systems
Iet Circuits Devices & Systems 工程技术-工程:电子与电气
CiteScore
3.80
自引率
7.70%
发文量
32
审稿时长
3 months
期刊介绍: IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers
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