{"title":"脉冲激光沉积法在MgO衬底上制备NaNbO3铁电薄膜","authors":"S. Oda, T. Saito, T. Wada, H. Adachi","doi":"10.1109/ISAF.2007.4393182","DOIUrl":null,"url":null,"abstract":"We have successfully fabricated good quality NaNbO<sub>3</sub> films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO<sub>3</sub> (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO<sub>3</sub> film was deposited. X-ray diffraction showed that the NaNbO<sub>3</sub> film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The <i>P-E</i> hysteresis loop of the NaNbO<sub>3</sub> film was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO<sub>3</sub> films epitaxially grown on (100)SrTiO<sub>3</sub> substrate.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Preparation of Ferroelectric NaNbO3 Thin Films on MgO Substrate by Pulsed Laser Deposition\",\"authors\":\"S. Oda, T. Saito, T. Wada, H. Adachi\",\"doi\":\"10.1109/ISAF.2007.4393182\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have successfully fabricated good quality NaNbO<sub>3</sub> films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO<sub>3</sub> (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO<sub>3</sub> film was deposited. X-ray diffraction showed that the NaNbO<sub>3</sub> film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The <i>P-E</i> hysteresis loop of the NaNbO<sub>3</sub> film was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO<sub>3</sub> films epitaxially grown on (100)SrTiO<sub>3</sub> substrate.\",\"PeriodicalId\":321007,\"journal\":{\"name\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2007.4393182\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393182","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Preparation of Ferroelectric NaNbO3 Thin Films on MgO Substrate by Pulsed Laser Deposition
We have successfully fabricated good quality NaNbO3 films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO3 (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO3 film was deposited. X-ray diffraction showed that the NaNbO3 film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The P-E hysteresis loop of the NaNbO3 film was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO3 films epitaxially grown on (100)SrTiO3 substrate.
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