C. McClellan, C. Bailey, I. Datye, A. Gabourie, R. Grady, K. Schauble, S. Vaziri, E. Pop
{"title":"3D异质集成与2D材料","authors":"C. McClellan, C. Bailey, I. Datye, A. Gabourie, R. Grady, K. Schauble, S. Vaziri, E. Pop","doi":"10.23919/SNW.2019.8782932","DOIUrl":null,"url":null,"abstract":"As traditional device scaling slows down, three-dimensional (3D) integrated circuits (ICs) are needed to continue Moore’s Law advancements. We show that two-dimensional (2D) semiconductors are promising for heterogeneously integrated 3D ICs owing to their atomically thin nature and unique processing, thermal, and device capabilities.","PeriodicalId":170513,"journal":{"name":"2019 Silicon Nanoelectronics Workshop (SNW)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"3D Heterogeneous Integration with 2D Materials\",\"authors\":\"C. McClellan, C. Bailey, I. Datye, A. Gabourie, R. Grady, K. Schauble, S. Vaziri, E. Pop\",\"doi\":\"10.23919/SNW.2019.8782932\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As traditional device scaling slows down, three-dimensional (3D) integrated circuits (ICs) are needed to continue Moore’s Law advancements. We show that two-dimensional (2D) semiconductors are promising for heterogeneously integrated 3D ICs owing to their atomically thin nature and unique processing, thermal, and device capabilities.\",\"PeriodicalId\":170513,\"journal\":{\"name\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2019.8782932\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2019.8782932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
As traditional device scaling slows down, three-dimensional (3D) integrated circuits (ICs) are needed to continue Moore’s Law advancements. We show that two-dimensional (2D) semiconductors are promising for heterogeneously integrated 3D ICs owing to their atomically thin nature and unique processing, thermal, and device capabilities.