基于mdd逻辑电路的多端纳米线结多径开关器件

S. Kasai, Y. Shiratori, Kensuke Miura, Nan-Jian Wu
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摘要

针对基于多值决策图(MDD)的逻辑电路,设计、制作并表征了简单、紧凑的多径开关器件。根据多值输入,设备切换多个出口支路,使电子从入口支路进入。开关功能是通过在多个具有不同阈值电压的纳米线上进行双门控来实现的。栅极阈值电压是通过精确设计栅极结构和纳米尺度的尺寸来控制的。用一个简单的解析模型描述了该装置的工作原理。使用AlGaAs/GaAs蚀刻纳米线结以及纳米级肖特基封装门(wpg)和面内门(IPGs)演示了三路开关器件。
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Multi-path Switching Device Utilizing a Multi-terminal Nanowire Junction for MDD-Based Logic Circuit
Simple and compact multi-path switching devices for multi-valued decision diagram (MDD)-based logic circuits are designed, fabricated and characterized. The devices switch multiple exit branches for electrons entering from an entry branch, according to multi-valued input. The switching function is implemented by dual gating on multiple nanowires with different threshold voltages. The gate threshold voltage is controlled by precise design of gate structures and sizes in nanometer scale. The operation principle of the device is described using a simple analytical model. Ternary-path switching devices are demonstrated using AlGaAs/GaAs etched nanowire junctions together with nanometer-scale Schottky wrap gates (WPGs) and in-plane gates (IPGs).
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