Sebastien Bernard, A. Valentian, M. Belleville, D. Bol, J. Legat
{"title":"基于28nm UTBB-FDSOI技术的稳健性超低电压脉冲触发触发器设计","authors":"Sebastien Bernard, A. Valentian, M. Belleville, D. Bol, J. Legat","doi":"10.1109/S3S.2013.6716555","DOIUrl":null,"url":null,"abstract":"So far, pulse-triggered flip-flops (pulsed-FFs) are mainly used in high-performance digital circuits, thanks to their small data-to-output delay. However, they suffer from a poor robustness to local variations occurring at ultra-low-voltage (ULV). Thanks to an innovative pulse generator, the operability of an energy-efficient pulsed-FF was validated at ultra-low operating supply voltage. Measurements of delays and correct functionality are performed in 28nm FDSOI technology. Then, the effect of back bias voltage, a key point in FDSOI technology, is studied and it is shown that our pulsed-FF reaches a minimum operating supply voltage of 170mV.","PeriodicalId":219932,"journal":{"name":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a robust and ultra-low-voltage pulse-triggered flip-flop in 28nm UTBB-FDSOI technology\",\"authors\":\"Sebastien Bernard, A. Valentian, M. Belleville, D. Bol, J. Legat\",\"doi\":\"10.1109/S3S.2013.6716555\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"So far, pulse-triggered flip-flops (pulsed-FFs) are mainly used in high-performance digital circuits, thanks to their small data-to-output delay. However, they suffer from a poor robustness to local variations occurring at ultra-low-voltage (ULV). Thanks to an innovative pulse generator, the operability of an energy-efficient pulsed-FF was validated at ultra-low operating supply voltage. Measurements of delays and correct functionality are performed in 28nm FDSOI technology. Then, the effect of back bias voltage, a key point in FDSOI technology, is studied and it is shown that our pulsed-FF reaches a minimum operating supply voltage of 170mV.\",\"PeriodicalId\":219932,\"journal\":{\"name\":\"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2013.6716555\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2013.6716555","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of a robust and ultra-low-voltage pulse-triggered flip-flop in 28nm UTBB-FDSOI technology
So far, pulse-triggered flip-flops (pulsed-FFs) are mainly used in high-performance digital circuits, thanks to their small data-to-output delay. However, they suffer from a poor robustness to local variations occurring at ultra-low-voltage (ULV). Thanks to an innovative pulse generator, the operability of an energy-efficient pulsed-FF was validated at ultra-low operating supply voltage. Measurements of delays and correct functionality are performed in 28nm FDSOI technology. Then, the effect of back bias voltage, a key point in FDSOI technology, is studied and it is shown that our pulsed-FF reaches a minimum operating supply voltage of 170mV.