基于28nm UTBB-FDSOI技术的稳健性超低电压脉冲触发触发器设计

Sebastien Bernard, A. Valentian, M. Belleville, D. Bol, J. Legat
{"title":"基于28nm UTBB-FDSOI技术的稳健性超低电压脉冲触发触发器设计","authors":"Sebastien Bernard, A. Valentian, M. Belleville, D. Bol, J. Legat","doi":"10.1109/S3S.2013.6716555","DOIUrl":null,"url":null,"abstract":"So far, pulse-triggered flip-flops (pulsed-FFs) are mainly used in high-performance digital circuits, thanks to their small data-to-output delay. However, they suffer from a poor robustness to local variations occurring at ultra-low-voltage (ULV). Thanks to an innovative pulse generator, the operability of an energy-efficient pulsed-FF was validated at ultra-low operating supply voltage. Measurements of delays and correct functionality are performed in 28nm FDSOI technology. Then, the effect of back bias voltage, a key point in FDSOI technology, is studied and it is shown that our pulsed-FF reaches a minimum operating supply voltage of 170mV.","PeriodicalId":219932,"journal":{"name":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a robust and ultra-low-voltage pulse-triggered flip-flop in 28nm UTBB-FDSOI technology\",\"authors\":\"Sebastien Bernard, A. Valentian, M. Belleville, D. Bol, J. Legat\",\"doi\":\"10.1109/S3S.2013.6716555\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"So far, pulse-triggered flip-flops (pulsed-FFs) are mainly used in high-performance digital circuits, thanks to their small data-to-output delay. However, they suffer from a poor robustness to local variations occurring at ultra-low-voltage (ULV). Thanks to an innovative pulse generator, the operability of an energy-efficient pulsed-FF was validated at ultra-low operating supply voltage. Measurements of delays and correct functionality are performed in 28nm FDSOI technology. Then, the effect of back bias voltage, a key point in FDSOI technology, is studied and it is shown that our pulsed-FF reaches a minimum operating supply voltage of 170mV.\",\"PeriodicalId\":219932,\"journal\":{\"name\":\"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/S3S.2013.6716555\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/S3S.2013.6716555","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

到目前为止,脉冲触发触发器(pulse - ff)主要用于高性能数字电路,因为它们的数据到输出延迟小。然而,它们对超低电压(ULV)下发生的局部变化具有较差的鲁棒性。由于采用了创新的脉冲发生器,节能脉冲式ff在超低工作电源电压下的可操作性得到了验证。延迟和正确功能的测量在28nm FDSOI技术中进行。然后,研究了反向偏置电压对FDSOI技术的影响,结果表明,我们的脉冲ff达到了170mV的最小工作电源电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Design of a robust and ultra-low-voltage pulse-triggered flip-flop in 28nm UTBB-FDSOI technology
So far, pulse-triggered flip-flops (pulsed-FFs) are mainly used in high-performance digital circuits, thanks to their small data-to-output delay. However, they suffer from a poor robustness to local variations occurring at ultra-low-voltage (ULV). Thanks to an innovative pulse generator, the operability of an energy-efficient pulsed-FF was validated at ultra-low operating supply voltage. Measurements of delays and correct functionality are performed in 28nm FDSOI technology. Then, the effect of back bias voltage, a key point in FDSOI technology, is studied and it is shown that our pulsed-FF reaches a minimum operating supply voltage of 170mV.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Direct point-contact characterization of Bias instability on bare SOI wafers Parallelism and pipelining in ultra low voltage digital circuits Enabling Sub-nW RF circuits through subthreshold leakage management Low power false positive tolerant event detector for seismic sensors Practical process flows for monolithic 3D
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1