{"title":"先进工业用超宽带GaN功率放大器的集成与封装","authors":"K. Samanta","doi":"10.1109/imarc49196.2021.9714661","DOIUrl":null,"url":null,"abstract":"Emerging industrial applications, including 5G/beyond wireless devices, require high-power CW amplifiers with ultrawide bandwidth within a compact size and with high-performance reliability and repeatability. Moreover, for a wideband GaN HPA overcoming inherent limitations, withstanding high output mismatch and efficient thermal management raise many integration/packaging challenges. This paper provides the practical design, integration and packaging difficulties with industrial solutions, together with advanced packaging technologies, efficient selection of integration process, thermal interfacing and die-attach materials and heat spreaders. Finally, presents the development of compact high power GaN PAs with wider than decade bandwidth and CW P1dB power of more than 1 kW.","PeriodicalId":226787,"journal":{"name":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Integration and Packaging of UWB GaN Power Amplifier for Advanced Industrial Applications\",\"authors\":\"K. Samanta\",\"doi\":\"10.1109/imarc49196.2021.9714661\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Emerging industrial applications, including 5G/beyond wireless devices, require high-power CW amplifiers with ultrawide bandwidth within a compact size and with high-performance reliability and repeatability. Moreover, for a wideband GaN HPA overcoming inherent limitations, withstanding high output mismatch and efficient thermal management raise many integration/packaging challenges. This paper provides the practical design, integration and packaging difficulties with industrial solutions, together with advanced packaging technologies, efficient selection of integration process, thermal interfacing and die-attach materials and heat spreaders. Finally, presents the development of compact high power GaN PAs with wider than decade bandwidth and CW P1dB power of more than 1 kW.\",\"PeriodicalId\":226787,\"journal\":{\"name\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/imarc49196.2021.9714661\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE MTT-S International Microwave and RF Conference (IMARC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/imarc49196.2021.9714661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integration and Packaging of UWB GaN Power Amplifier for Advanced Industrial Applications
Emerging industrial applications, including 5G/beyond wireless devices, require high-power CW amplifiers with ultrawide bandwidth within a compact size and with high-performance reliability and repeatability. Moreover, for a wideband GaN HPA overcoming inherent limitations, withstanding high output mismatch and efficient thermal management raise many integration/packaging challenges. This paper provides the practical design, integration and packaging difficulties with industrial solutions, together with advanced packaging technologies, efficient selection of integration process, thermal interfacing and die-attach materials and heat spreaders. Finally, presents the development of compact high power GaN PAs with wider than decade bandwidth and CW P1dB power of more than 1 kW.