包括脉冲x射线在内的各种SEE测试方法的交叉校准及其在SEL和SEU中的应用

G. Augustin, M. Mauguet, N. Andrianjohany, N. Chatry, F. Bezerra, E. Capria, M. Sander, K. Voss
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引用次数: 0

摘要

这项工作是对使用替代SEE测试方法的贡献。我们首先报告了在p-i-n光电二极管中收集的电荷测量和模拟。主要目的是评价重离子宽束与微束、脉冲x射线与激光脉冲之间的相关参数。本研究还依赖于耦合和分析模拟来进一步了解所涉及的物理现象。分析了在CMOS ASIC上获得的SEL电流形状,并在时间尺度上证实了这些测试方法的相关性。这些结果随后被用于用脉冲x射线和重离子在SRAM中研究SEU爆发。
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Cross-Calibration of Various SEE Test Methods Including Pulsed X-rays and Application to SEL and SEU
This work is a contribution to the use of alternative SEE test methods. We first report collected charge measurements and simulations in a p-i-n photodiode. The main purpose was to evaluate parameters leading to the correlation between heavy ion broadbeam and microbeam, pulsed X-rays and laser pulses. This study also relies on coupled and analytical simulation to further understand the physical phenomena involved. SEL current shape acquired on a CMOS ASIC were also analyzed and confirm the correlation of these test methods at the temporal scale. These results were then used to study SEU bursts in an SRAM with pulsed X-rays and heavy ions.
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