S. Trellenkamp, M. Mikulics, A. Winden, Y. Arango, J. Moers, M. Marso, D. Grutzmacher, H. Hardtdegen
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III-nitride nano-LEDs for single photon lithography
We fabricated and tested III-nitride (p-GaN/MQW/n-GaN/sapphire) based nano-LEDs designed for operation in the single photon lithography technique. The band edge luminescence energy of the III-nitride nano-LEDs depends linearly on the structure size. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long term operation without any indication of degradation effects. This novel technology shows strong potential for a future flexible single photon lithography [1] which is applicable for molecular photonic and electronic circuits.