一个22.8 GHz至32.8 GHz紧凑型功率放大器，输出P1dB为15 dBm，峰值PAE为36.5%，采用65nm CMOS

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2022-10-28 DOI:10.1109/ICTA56932.2022.9963053

Huabing Liao, Haikun Jia, Xiangrong Huang, Bao Shi, W. Deng, B. Chi, Zhihua Wang

{"title":"一个22.8 GHz至32.8 GHz紧凑型功率放大器，输出P1dB为15 dBm，峰值PAE为36.5%，采用65nm CMOS","authors":"Huabing Liao, Haikun Jia, Xiangrong Huang, Bao Shi, W. Deng, B. Chi, Zhihua Wang","doi":"10.1109/ICTA56932.2022.9963053","DOIUrl":null,"url":null,"abstract":"A CMOS broadband millimeter-wave power amplifier (PA) based on a Sandwiched Transformer (ST) output matching network is presented in this paper. The ST output matching network with a three-layer structure providing a larger coupling coefficient (k) than the traditional two-layer stack structure is proposed for PA's output matching network. The layout of the transistors is optimized to improve the PA's performance. Fabricated in 65-nm CMOS process, the PA has achieved 15 dBm OP1dBand 36.5% peak power added efficiency (PAE). The 3-dB bandwidth of the PA is from 22.8 GHz to 32.8 GHz.","PeriodicalId":325602,"journal":{"name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 22.8 GHz to 32.8 GHz Compact Power Amplifier with a 15 dBm Output P1dB and 36.5% Peak PAE in 65-nm CMOS\",\"authors\":\"Huabing Liao, Haikun Jia, Xiangrong Huang, Bao Shi, W. Deng, B. Chi, Zhihua Wang\",\"doi\":\"10.1109/ICTA56932.2022.9963053\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS broadband millimeter-wave power amplifier (PA) based on a Sandwiched Transformer (ST) output matching network is presented in this paper. The ST output matching network with a three-layer structure providing a larger coupling coefficient (k) than the traditional two-layer stack structure is proposed for PA's output matching network. The layout of the transistors is optimized to improve the PA's performance. Fabricated in 65-nm CMOS process, the PA has achieved 15 dBm OP1dBand 36.5% peak power added efficiency (PAE). The 3-dB bandwidth of the PA is from 22.8 GHz to 32.8 GHz.\",\"PeriodicalId\":325602,\"journal\":{\"name\":\"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTA56932.2022.9963053\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTA56932.2022.9963053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

提出了一种基于夹层变压器输出匹配网络的CMOS宽带毫米波功率放大器。针对PA的输出匹配网络，提出了具有三层结构的ST输出匹配网络，其耦合系数(k)大于传统的两层堆叠结构。优化了晶体管的布局，提高了放大器的性能。PA采用65纳米CMOS工艺制造，实现了15 dBm OP1dBand 36.5%的峰值功率附加效率(PAE)。PA的3db带宽范围为22.8 GHz ~ 32.8 GHz。

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A 22.8 GHz to 32.8 GHz Compact Power Amplifier with a 15 dBm Output P1dB and 36.5% Peak PAE in 65-nm CMOS

A CMOS broadband millimeter-wave power amplifier (PA) based on a Sandwiched Transformer (ST) output matching network is presented in this paper. The ST output matching network with a three-layer structure providing a larger coupling coefficient (k) than the traditional two-layer stack structure is proposed for PA's output matching network. The layout of the transistors is optimized to improve the PA's performance. Fabricated in 65-nm CMOS process, the PA has achieved 15 dBm OP1dBand 36.5% peak power added efficiency (PAE). The 3-dB bandwidth of the PA is from 22.8 GHz to 32.8 GHz.

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2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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