G. Navarro, V. Sousa, P. Noé, N. Castellani, M. Coue, J. Kluge, A. Kiouseloglou, C. Sabbione, A. Persico, A. Roule, O. Cueto, S. Blonkowski, F. Fillot, N. Bernier, R. Annunziata, M. Borghi, E. Palumbo, P. Zuliani, L. Perniola
{"title":"n掺杂对优化富锗材料相变存储器的影响","authors":"G. Navarro, V. Sousa, P. Noé, N. Castellani, M. Coue, J. Kluge, A. Kiouseloglou, C. Sabbione, A. Persico, A. Roule, O. Cueto, S. Blonkowski, F. Fillot, N. Bernier, R. Annunziata, M. Borghi, E. Palumbo, P. Zuliani, L. Perniola","doi":"10.1109/IMW.2016.7495284","DOIUrl":null,"url":null,"abstract":"In this paper we investigate the impact of N- doping in optimized Ge-rich Ge2Sb2Te5 materials on device programming and storing performance. We integrate these alloys in state-of-the-art Phase- Change Memory (PCM) cells and we analyze the efficiency of the SET operation in N-doped and undoped memory cells, comparing voltage based programming with current based programming. This aspect is extensively investigated through electrical characterization, physico-chemical analysis and electro-thermal simulations. The thermal stability of these devices is finally evaluated and high temperature data retention is granted enabling PCM for embedded applications.","PeriodicalId":365759,"journal":{"name":"2016 IEEE 8th International Memory Workshop (IMW)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"N-Doping Impact in Optimized Ge-Rich Materials Based Phase-Change Memory\",\"authors\":\"G. Navarro, V. Sousa, P. Noé, N. Castellani, M. Coue, J. Kluge, A. Kiouseloglou, C. Sabbione, A. Persico, A. Roule, O. Cueto, S. Blonkowski, F. Fillot, N. Bernier, R. Annunziata, M. Borghi, E. Palumbo, P. Zuliani, L. Perniola\",\"doi\":\"10.1109/IMW.2016.7495284\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we investigate the impact of N- doping in optimized Ge-rich Ge2Sb2Te5 materials on device programming and storing performance. We integrate these alloys in state-of-the-art Phase- Change Memory (PCM) cells and we analyze the efficiency of the SET operation in N-doped and undoped memory cells, comparing voltage based programming with current based programming. This aspect is extensively investigated through electrical characterization, physico-chemical analysis and electro-thermal simulations. The thermal stability of these devices is finally evaluated and high temperature data retention is granted enabling PCM for embedded applications.\",\"PeriodicalId\":365759,\"journal\":{\"name\":\"2016 IEEE 8th International Memory Workshop (IMW)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 8th International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2016.7495284\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2016.7495284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
N-Doping Impact in Optimized Ge-Rich Materials Based Phase-Change Memory
In this paper we investigate the impact of N- doping in optimized Ge-rich Ge2Sb2Te5 materials on device programming and storing performance. We integrate these alloys in state-of-the-art Phase- Change Memory (PCM) cells and we analyze the efficiency of the SET operation in N-doped and undoped memory cells, comparing voltage based programming with current based programming. This aspect is extensively investigated through electrical characterization, physico-chemical analysis and electro-thermal simulations. The thermal stability of these devices is finally evaluated and high temperature data retention is granted enabling PCM for embedded applications.
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