采用CMOS技术的片上ESD保护的高压驱动电路

Chun-Yu Lin, Yan-Lian Chiu
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引用次数: 1

摘要

提出了一种适用于机器人电机控制器等应用的高压大功率驱动电路。驱动电路还采用了新颖的静电放电保护设计,提高了电路的可靠性。采用0.18 μm CMOS工艺,Vdd为3.3V,设计了具有片内ESD保护的3×VDD-tolerant驱动电路。无需使用任何额外的ESD保护装置或布局区域,即可提高ESD稳健性。此外,该设计技术可用于具有改善ESD稳健性的n * vdd耐受性驱动电路。
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High-voltage driving circuit with on-chip ESD protection in CMOS technology
A high-voltage / high-power driving circuit for the applicatrions such as a motor controller in robot is presented in this work. The driving circuit is further equipped with a novel electrostatic discharge (ESD) protection design to enhance its reliability. A 3×VDD-tolerant driving circuit with on-chip ESD protection is demonstrated using a 0.18 μm CMOS process with Vdd of 3.3V. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, this design technique can be used for an n∗Vdd-tolerant driving circuit with improved ESD robustness.
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