{"title":"用于系统面板和三维集成电路的隧道薄膜晶体管的正偏置温度不稳定性","authors":"William Cheng-Yu Ma, Hui-Shun Hsu, Che-Yu Jao, C.-C. Fang, Tzu-Han Liao","doi":"10.23919/SNW.2017.8242329","DOIUrl":null,"url":null,"abstract":"Positive bias temperature instability (PBTI) of tunnel thin-film transistor (TFT) with poly-Si channel film is proposed for the first time. The novel interband tunneling transport mechanism of tunnel-TFT results in special PBTI behavior. For PBTI at 75 °C with stress voltage 10 V, tunnel-TFT exhibit excellent PBTI immunity compared to conventional TFT. However, the degradation of tunnel-TFT is getting worse when the temperature of PBTI is reduced. It may be because the interband tunneling is more sensitive at low temperature due to the deep trap characteristics, which affects the transport behavior of tunneling electrons. It would be helpful for the development of tunnel transistors.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"113 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Positive bias temperature instability of tunnel thin-film transistor for applications of system-on-panel and three-dimension integrated circuits\",\"authors\":\"William Cheng-Yu Ma, Hui-Shun Hsu, Che-Yu Jao, C.-C. Fang, Tzu-Han Liao\",\"doi\":\"10.23919/SNW.2017.8242329\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Positive bias temperature instability (PBTI) of tunnel thin-film transistor (TFT) with poly-Si channel film is proposed for the first time. The novel interband tunneling transport mechanism of tunnel-TFT results in special PBTI behavior. For PBTI at 75 °C with stress voltage 10 V, tunnel-TFT exhibit excellent PBTI immunity compared to conventional TFT. However, the degradation of tunnel-TFT is getting worse when the temperature of PBTI is reduced. It may be because the interband tunneling is more sensitive at low temperature due to the deep trap characteristics, which affects the transport behavior of tunneling electrons. It would be helpful for the development of tunnel transistors.\",\"PeriodicalId\":424135,\"journal\":{\"name\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"volume\":\"113 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Silicon Nanoelectronics Workshop (SNW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/SNW.2017.8242329\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242329","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Positive bias temperature instability of tunnel thin-film transistor for applications of system-on-panel and three-dimension integrated circuits
Positive bias temperature instability (PBTI) of tunnel thin-film transistor (TFT) with poly-Si channel film is proposed for the first time. The novel interband tunneling transport mechanism of tunnel-TFT results in special PBTI behavior. For PBTI at 75 °C with stress voltage 10 V, tunnel-TFT exhibit excellent PBTI immunity compared to conventional TFT. However, the degradation of tunnel-TFT is getting worse when the temperature of PBTI is reduced. It may be because the interband tunneling is more sensitive at low temperature due to the deep trap characteristics, which affects the transport behavior of tunneling electrons. It would be helpful for the development of tunnel transistors.
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