{"title":"微机械元件组装的硅晶圆键合技术","authors":"A. Hanneborg","doi":"10.1109/MEMSYS.1991.114775","DOIUrl":null,"url":null,"abstract":"Different bonding techniques under development for assembly of micromechanical elements are reviewed. A versatile wafer-to-wafer bonding process using silicon-to-silicon anodic bonding with sputtered Pyrex 7740 borosilicate thin film has been developed. The method gives sealings with a bonding strength of approximately 2.5*10/sup 6/N/m/sup 2/ and excellent thermal matching, resulting in minimized thermally induced stress in micromechanical components. The anodic bonding is performed at temperatures well below the aluminum/silicon eutectic temperature, making the process suitable also for metallized wafers. The large electrostatic force obtained during bonding is crucial for a high-yield wafer-to-wafer bonding process. High bonding strength and complete bonding of 3-in wafers were obtained. This technique was used for a silicon pressure sensor application, giving excellent thermal and long term stability for this sensor. The results are supported by finite-element calculations.<<ETX>>","PeriodicalId":258054,"journal":{"name":"[1991] Proceedings. IEEE Micro Electro Mechanical Systems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"Silicon wafer bonding techniques for assembly of micromechanical elements\",\"authors\":\"A. Hanneborg\",\"doi\":\"10.1109/MEMSYS.1991.114775\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Different bonding techniques under development for assembly of micromechanical elements are reviewed. A versatile wafer-to-wafer bonding process using silicon-to-silicon anodic bonding with sputtered Pyrex 7740 borosilicate thin film has been developed. The method gives sealings with a bonding strength of approximately 2.5*10/sup 6/N/m/sup 2/ and excellent thermal matching, resulting in minimized thermally induced stress in micromechanical components. The anodic bonding is performed at temperatures well below the aluminum/silicon eutectic temperature, making the process suitable also for metallized wafers. The large electrostatic force obtained during bonding is crucial for a high-yield wafer-to-wafer bonding process. High bonding strength and complete bonding of 3-in wafers were obtained. This technique was used for a silicon pressure sensor application, giving excellent thermal and long term stability for this sensor. The results are supported by finite-element calculations.<<ETX>>\",\"PeriodicalId\":258054,\"journal\":{\"name\":\"[1991] Proceedings. IEEE Micro Electro Mechanical Systems\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-01-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] Proceedings. IEEE Micro Electro Mechanical Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.1991.114775\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings. IEEE Micro Electro Mechanical Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.1991.114775","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon wafer bonding techniques for assembly of micromechanical elements
Different bonding techniques under development for assembly of micromechanical elements are reviewed. A versatile wafer-to-wafer bonding process using silicon-to-silicon anodic bonding with sputtered Pyrex 7740 borosilicate thin film has been developed. The method gives sealings with a bonding strength of approximately 2.5*10/sup 6/N/m/sup 2/ and excellent thermal matching, resulting in minimized thermally induced stress in micromechanical components. The anodic bonding is performed at temperatures well below the aluminum/silicon eutectic temperature, making the process suitable also for metallized wafers. The large electrostatic force obtained during bonding is crucial for a high-yield wafer-to-wafer bonding process. High bonding strength and complete bonding of 3-in wafers were obtained. This technique was used for a silicon pressure sensor application, giving excellent thermal and long term stability for this sensor. The results are supported by finite-element calculations.<>