Ayata Kurasaki, Sumio Sugiski, R. Tanaka, T. Matsuda, M. Kimura
{"title":"用Ga-Sn-O薄膜制备两层ReRAM","authors":"Ayata Kurasaki, Sumio Sugiski, R. Tanaka, T. Matsuda, M. Kimura","doi":"10.23919/AM-FPD.2019.8830625","DOIUrl":null,"url":null,"abstract":"We have studied Resistive Random Access Memory (ReRAM) using Ga-Sn-O (GTO) thin film. The device fabricated in this study has a sandwich structure in which two layers of GTO thin films with different resistance values are sandwiched between electrodes. From the current-voltage characteristics of the fabricated device, it was possible to confirm the function as memory even if writing and erasing are repeated 400 times.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of two-layered ReRAM using Ga-Sn-O thin film\",\"authors\":\"Ayata Kurasaki, Sumio Sugiski, R. Tanaka, T. Matsuda, M. Kimura\",\"doi\":\"10.23919/AM-FPD.2019.8830625\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied Resistive Random Access Memory (ReRAM) using Ga-Sn-O (GTO) thin film. The device fabricated in this study has a sandwich structure in which two layers of GTO thin films with different resistance values are sandwiched between electrodes. From the current-voltage characteristics of the fabricated device, it was possible to confirm the function as memory even if writing and erasing are repeated 400 times.\",\"PeriodicalId\":129222,\"journal\":{\"name\":\"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/AM-FPD.2019.8830625\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2019.8830625","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of two-layered ReRAM using Ga-Sn-O thin film
We have studied Resistive Random Access Memory (ReRAM) using Ga-Sn-O (GTO) thin film. The device fabricated in this study has a sandwich structure in which two layers of GTO thin films with different resistance values are sandwiched between electrodes. From the current-voltage characteristics of the fabricated device, it was possible to confirm the function as memory even if writing and erasing are repeated 400 times.
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