40nm CMOS 50G PON光接收器前端

Nianquan Ran, Jia Li, Shuaizhe Ma, Yuye Yang, Wanqing Zhao, Hao Li, Dan Li
{"title":"40nm CMOS 50G PON光接收器前端","authors":"Nianquan Ran, Jia Li, Shuaizhe Ma, Yuye Yang, Wanqing Zhao, Hao Li, Dan Li","doi":"10.1109/ICTA56932.2022.9962967","DOIUrl":null,"url":null,"abstract":"With the determination of the 50Gb/s PON communication network standard, there is a large demand for 50Gb/s PON chips. In this paper, we design a 50Gb/s transimpedance amplifier (TIA) chip with very low power consumption, which greatly reduces the manufacturing cost by adopting the 40nm standard CMOS process. In the high gain mode, the transimpedance gain is 66.0dBΩ and the bandwidth is 30.4GHz. In the low gain mode, the transimpedance is 52.4dBΩ and the bandwidth is 34.1GHz. The input signal range can reach 2mA at most and the maximum differential output swing is 440mVpp. The receiver front-end circuit consumes 23.4mW, and the energy efficiency is 0.47pJ/bit.","PeriodicalId":325602,"journal":{"name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical Receiver Front-End for 50G PON in 40nm CMOS\",\"authors\":\"Nianquan Ran, Jia Li, Shuaizhe Ma, Yuye Yang, Wanqing Zhao, Hao Li, Dan Li\",\"doi\":\"10.1109/ICTA56932.2022.9962967\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the determination of the 50Gb/s PON communication network standard, there is a large demand for 50Gb/s PON chips. In this paper, we design a 50Gb/s transimpedance amplifier (TIA) chip with very low power consumption, which greatly reduces the manufacturing cost by adopting the 40nm standard CMOS process. In the high gain mode, the transimpedance gain is 66.0dBΩ and the bandwidth is 30.4GHz. In the low gain mode, the transimpedance is 52.4dBΩ and the bandwidth is 34.1GHz. The input signal range can reach 2mA at most and the maximum differential output swing is 440mVpp. The receiver front-end circuit consumes 23.4mW, and the energy efficiency is 0.47pJ/bit.\",\"PeriodicalId\":325602,\"journal\":{\"name\":\"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTA56932.2022.9962967\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTA56932.2022.9962967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

随着50Gb/s PON通信网络标准的确定,对50Gb/s PON芯片的需求很大。本文设计了一款功耗极低的50Gb/s跨阻放大器(TIA)芯片,采用40nm标准CMOS工艺,大大降低了制造成本。在高增益模式下,跨阻增益为66.0dBΩ,带宽为30.4GHz。在低增益模式下,通阻为52.4dBΩ,带宽为34.1GHz。输入信号范围最大可达2mA,最大差分输出摆幅440mVpp。接收机前端电路功耗23.4mW,能量效率0.47pJ/bit。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Optical Receiver Front-End for 50G PON in 40nm CMOS
With the determination of the 50Gb/s PON communication network standard, there is a large demand for 50Gb/s PON chips. In this paper, we design a 50Gb/s transimpedance amplifier (TIA) chip with very low power consumption, which greatly reduces the manufacturing cost by adopting the 40nm standard CMOS process. In the high gain mode, the transimpedance gain is 66.0dBΩ and the bandwidth is 30.4GHz. In the low gain mode, the transimpedance is 52.4dBΩ and the bandwidth is 34.1GHz. The input signal range can reach 2mA at most and the maximum differential output swing is 440mVpp. The receiver front-end circuit consumes 23.4mW, and the energy efficiency is 0.47pJ/bit.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 4.2-to-5.6 GHz Transformer-Based PMOS-only Stacked-gm VCO in 28-nm CMOS A 0.58-pJ/bit 56-Gb/s PAM-4 Optical Receiver Frontend with an Envelope Tracker for Co-Packaged Optics in 40-nm CMOS CVD Monolayer tungsten-based PMOS Transistor with high performance at Vds = -1 V A 1000 fps Spiking Neural Network Tracking Algorithm for On-Chip Processing of Dynamic Vision Sensor Data Hardware Based RISC-V Instruction Set Randomization
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1