一个180纳米的CMOS射频发射机，用于UHF RFID阅读器

2015 International Conference on Advanced Technologies for Communications (ATC) Pub Date : 2015-10-01 DOI:10.1109/ATC.2015.7388329

K. Tuan, P. M. Cuong Huynh

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摘要

本文采用180nm CMOS技术设计了RFID读写器的射频发射器，工作频率为868 MHz。本文设计的RFID读写器射频发射器包括上变频混频器、平衡器和E类功率放大器。结果表明，最大输出功率为20.34 dBm, OP1dB为19.3 dBm, PAE为38.35%，功耗为168.57 mW。

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A 180-nm CMOS RF transmitter for UHF RFID reader

This paper presents the design of the RF transmitter of RFID reader using 180-nm CMOS technology at 868 MHz. The design of RF transmitter of RFID reader in this paper includes up-conversion mixer, balun and class E of power amplifier. These results are maximum output power of 20.34 dBm, OP1dB of 19.3 dBm, PAE of 38.35% and power consumption of 168.57 mW.

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2015 International Conference on Advanced Technologies for Communications (ATC)

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