带相位补偿可变衰减器的60ghz可变增益放大器

G. Park, Jae Kwang Kwon, D. Kang, C. Park
{"title":"带相位补偿可变衰减器的60ghz可变增益放大器","authors":"G. Park, Jae Kwang Kwon, D. Kang, C. Park","doi":"10.1109/SiRF51851.2021.9383343","DOIUrl":null,"url":null,"abstract":"A 60-GHz variable-gain amplifier with a phase-compensated variable attenuator is proposed herein. The proposed circuit comprises a four-stage common-source amplifier and a phase-compensated attenuator. The proposed circuit is implemented using a 65-nm CMOS process and occupies 360 μm × 765 μm including pads. The measured peak gain is 15.2 dB, and the 3-dB bandwidth exceeds 17.5 GHz from 49.5 to over 67 GHz. In addition, the proposed circuit achieves a gain control range exceeding 14.7 dB within a 3-dB bandwidth. Owing to the proposed phase compensation technique, the phase-compensated attenuator exhibits a maximum phase error of 2.9° and a RMS phase error of 1.7° at 56 GHz while consuming only 11.8 mW of DC power.","PeriodicalId":166842,"journal":{"name":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 60-GHz Variable Gain Amplifier with Phase-compensated Variable Attenuator\",\"authors\":\"G. Park, Jae Kwang Kwon, D. Kang, C. Park\",\"doi\":\"10.1109/SiRF51851.2021.9383343\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 60-GHz variable-gain amplifier with a phase-compensated variable attenuator is proposed herein. The proposed circuit comprises a four-stage common-source amplifier and a phase-compensated attenuator. The proposed circuit is implemented using a 65-nm CMOS process and occupies 360 μm × 765 μm including pads. The measured peak gain is 15.2 dB, and the 3-dB bandwidth exceeds 17.5 GHz from 49.5 to over 67 GHz. In addition, the proposed circuit achieves a gain control range exceeding 14.7 dB within a 3-dB bandwidth. Owing to the proposed phase compensation technique, the phase-compensated attenuator exhibits a maximum phase error of 2.9° and a RMS phase error of 1.7° at 56 GHz while consuming only 11.8 mW of DC power.\",\"PeriodicalId\":166842,\"journal\":{\"name\":\"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"197 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-01-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiRF51851.2021.9383343\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF51851.2021.9383343","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

提出了一种带相位补偿式可变衰减器的60ghz变增益放大器。所提出的电路包括一个四级共源放大器和一个相位补偿衰减器。该电路采用65纳米CMOS工艺实现,包括焊盘在内,电路面积为360 μm × 765 μm。测得的峰值增益为15.2 dB, 3db带宽从49.5 GHz超过17.5 GHz,达到67ghz以上。此外,该电路在3db带宽内实现了超过14.7 dB的增益控制范围。由于所提出的相位补偿技术,相位补偿衰减器在56 GHz时显示出2.9°的最大相位误差和1.7°的RMS相位误差,而仅消耗11.8 mW的直流功率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 60-GHz Variable Gain Amplifier with Phase-compensated Variable Attenuator
A 60-GHz variable-gain amplifier with a phase-compensated variable attenuator is proposed herein. The proposed circuit comprises a four-stage common-source amplifier and a phase-compensated attenuator. The proposed circuit is implemented using a 65-nm CMOS process and occupies 360 μm × 765 μm including pads. The measured peak gain is 15.2 dB, and the 3-dB bandwidth exceeds 17.5 GHz from 49.5 to over 67 GHz. In addition, the proposed circuit achieves a gain control range exceeding 14.7 dB within a 3-dB bandwidth. Owing to the proposed phase compensation technique, the phase-compensated attenuator exhibits a maximum phase error of 2.9° and a RMS phase error of 1.7° at 56 GHz while consuming only 11.8 mW of DC power.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Low-Power 60GHz Receiver with an Integrated Analog Baseband for FMCW Radar Applications in 28nm CMOS Technology A 60-GHz Variable Gain Amplifier with Phase-compensated Variable Attenuator SiRF 2021 Author Index A Compact Monostatic Transceiver Topology Using a Diode-Based Mixer SiRF 2021 Committees
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1