A. Nadeem, M. Mescher, K. Rebello, L. Weiss, C. Wu, M. Feldman, M. L. Reed
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引用次数: 12
摘要
Tan等人在MEMS-95上提出了一种很有前途的制造高纵横比微结构的技术,该技术利用了阳极金属氧化物的高度有序的孔隙结构。在这项工作中,我们对该方法进行了扩展和简化。该工艺能够产生面向非平面衬底的高纵横比微结构。与将铝基板阳极氧化至所需深度、掩膜并随后蚀刻的原始工艺不同,改进的工艺涉及在阳极氧化之前进行掩膜光刻。铝衬底的图案区域被0.6/spl μ m /m的溅射二氧化硅层掩盖。SiO/ sub2 /层防止在被遮挡区域阳极化,而氧化物在未被遮挡区域生长。在本文中,我们介绍了在铝基板上使用这种局部阳极氧化工艺的初步结果,并讨论了该工艺在非平面基板上制造结构的应用。
Fabrication of microstructures using aluminum anodization techniques
A promising technique for the fabrication of high-aspect-ratio microstructures, presented by Tan et. al. at MEMS-95, takes advantage of the highly ordered pore structure of anodic metal oxides. In this work, we have extended and simplified this method. This process is capable of producing high-aspect-ratio microstructures oriented normal to a nonplanar substrate. Unlike the original process in which the aluminum substrate was anodized to the desired depth, masked and subsequently etched, the modified process involves performing the masking lithography prior to anodization. Patterned areas of an aluminum substrate are masked with a 0.6/spl mu/m layer of sputtered silicon dioxide. The SiO/sub 2/ layer prevents anodization in masked areas while the oxide grows in unmasked areas. In this paper, we present preliminary results using this local anodization process on aluminum substrates and discuss the use of the process for fabricating structures on nonplanar substrates.