{"title":"具有肖特基势垒的亚太赫兹二极管的电物理特性","authors":"V. D. Moskalenko, A. Badin, D. A. Pidotova","doi":"10.1109/EDM49804.2020.9153468","DOIUrl":null,"url":null,"abstract":"In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n-GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115–257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.","PeriodicalId":147681,"journal":{"name":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrophysical Characteristics of Sub-THz Diode with Schottky Barrier\",\"authors\":\"V. D. Moskalenko, A. Badin, D. A. Pidotova\",\"doi\":\"10.1109/EDM49804.2020.9153468\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n-GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115–257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.\",\"PeriodicalId\":147681,\"journal\":{\"name\":\"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM49804.2020.9153468\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM49804.2020.9153468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrophysical Characteristics of Sub-THz Diode with Schottky Barrier
In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n-GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115–257 GHz are given. The possibility of using such semiconductor structures as a detector of Sub-THz radiation is shown.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
