用于高速基材制造的下一代附着力增强系统

T. Thomas, P. Brooks, F. Michalik, W. Cho
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引用次数: 0

摘要

提高铜与层压树脂之间的粘附性是微电子制造中最大的挑战之一,例如集成电路衬底。由于提供了尽可能高的机械联锁,通过表面粗化增强粘合工艺是主要的使用方法。在这个过程中,通常需要去除$\ mathm {1}- $ mathm {2}\ \mu\ mathm {m}$的铜,以保证电介质与铜表面的可靠粘附。随着电子工业的快速发展,对$\mathrm{L}/\mathrm{S}\, (< \mathrm{10}\ \mu\mathrm{m})$和较高速度下良好的信号传播提出了要求。通过增加表面粗糙度来确保导体与电介质良好粘附的传统方法已不再适用。这项工作证明了一种新的铜表面处理方法的发展,可以满足高速功能IC基态制造的所有挑战。所开发的表面处理系统采用了在铜表面上进行后续处理的有机涂层,即所谓的“粘附促进剂(AP)”,通过化学粘附提供尽可能强的结合强度。结果表明,在铜表面粗糙度极低的情况下,导体与介电体的附着力显著提高。
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Next generation of adhesion enhancement system for high speed substrate manufacturing
Improving adhesion between copper and lamination resin is one of the biggest challenges in micro-electronic manufacturing, such as IC substrate. Bonding enhancement process by surface roughening is predominant use method, due to providing the highest possible mechanical interlocking. In this process typically $\mathrm{1}-\mathrm{2}\ \mu\mathrm{m}$ of copper need to be removed for reliable adhesion of dielectrics to the copper surface. Follow rapid development of electronics industry, where fine $\mathrm{L}/\mathrm{S}\, (< \mathrm{10}\ \mu\mathrm{m})$ and good signal propagation at higher speed are required. The conventional approach to ensure good adhesion of the conductor to the dielectrics by increasing surface roughness to achieve adhesion is no longer applicable. This work demonstrates the development of a novel surface treatment method of copper which can meet all the challenges of IC substate manufacturing for high speed function. The developed surface treatment system adopted subsequent treatment of organic coating so called “adhesion promoter (AP)” on top of copper surface to provide the strongest possible bond strength via chemical adhesion. As a result, significant improvement of adhesion of conductor to dielectrics can be obtained at ultra-low copper surface roughness.
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