J. Heo, Hyun‐Jong Chung, Sung-Hoon Lee, Heejun Yang, Jaikwang Shin, U. Chung, S. Seo
{"title":"在150mm基板上集成高质量顶门控石墨烯场效应器件","authors":"J. Heo, Hyun‐Jong Chung, Sung-Hoon Lee, Heejun Yang, Jaikwang Shin, U. Chung, S. Seo","doi":"10.1109/DRC.2011.5994407","DOIUrl":null,"url":null,"abstract":"Recent success of inexpensive and high-throughput chemical vapor deposition (CVD) growth [1] of graphene on Ni or Cu substrates has shown promises for potential industrial applications such as transparent electrodes [2] and field effect transistors (FET). [3] However, high-coverage uniform growth of monolayer graphene on a wafer scale is still a major obstruction, which impedes high yield integration of high performance field effect devices. Here, we report the first demonstration of high quality top-gated graphene field effect devices on 150 mm substrates exploiting unprecedented homogeneous CVD growth of monolayer graphene.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Integration of high quality top-gated graphene field effect devices on 150 mm substrate\",\"authors\":\"J. Heo, Hyun‐Jong Chung, Sung-Hoon Lee, Heejun Yang, Jaikwang Shin, U. Chung, S. Seo\",\"doi\":\"10.1109/DRC.2011.5994407\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent success of inexpensive and high-throughput chemical vapor deposition (CVD) growth [1] of graphene on Ni or Cu substrates has shown promises for potential industrial applications such as transparent electrodes [2] and field effect transistors (FET). [3] However, high-coverage uniform growth of monolayer graphene on a wafer scale is still a major obstruction, which impedes high yield integration of high performance field effect devices. Here, we report the first demonstration of high quality top-gated graphene field effect devices on 150 mm substrates exploiting unprecedented homogeneous CVD growth of monolayer graphene.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994407\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994407","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integration of high quality top-gated graphene field effect devices on 150 mm substrate
Recent success of inexpensive and high-throughput chemical vapor deposition (CVD) growth [1] of graphene on Ni or Cu substrates has shown promises for potential industrial applications such as transparent electrodes [2] and field effect transistors (FET). [3] However, high-coverage uniform growth of monolayer graphene on a wafer scale is still a major obstruction, which impedes high yield integration of high performance field effect devices. Here, we report the first demonstration of high quality top-gated graphene field effect devices on 150 mm substrates exploiting unprecedented homogeneous CVD growth of monolayer graphene.