基于焦耳加热和电迁移的直流和脉冲工作OxRAM全解析紧凑模型

2016 IEEE 8th International Memory Workshop (IMW) Pub Date : 2016-05-15 DOI:10.1109/IMW.2016.7495270

S. Blonkowski, T. Cabout, M. Azazz, C. Cagli, E. Jalaguier

{"title":"基于焦耳加热和电迁移的直流和脉冲工作OxRAM全解析紧凑模型","authors":"S. Blonkowski, T. Cabout, M. Azazz, C. Cagli, E. Jalaguier","doi":"10.1109/IMW.2016.7495270","DOIUrl":null,"url":null,"abstract":"A totally analytic compact model of bipolar switching in oxide based resistive memory is reported. Analytical expressions reproducing the switching in the case of ramp voltage and short voltage pulses without any iterative procedure are given. The model results are compared to experimental data and to a numerical model containing the same physical basis.","PeriodicalId":365759,"journal":{"name":"2016 IEEE 8th International Memory Workshop (IMW)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fully Analytical Compact Model of OxRAM Based on Joule Heating and Electromigration for DC and Pulsed Operation\",\"authors\":\"S. Blonkowski, T. Cabout, M. Azazz, C. Cagli, E. Jalaguier\",\"doi\":\"10.1109/IMW.2016.7495270\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A totally analytic compact model of bipolar switching in oxide based resistive memory is reported. Analytical expressions reproducing the switching in the case of ramp voltage and short voltage pulses without any iterative procedure are given. The model results are compared to experimental data and to a numerical model containing the same physical basis.\",\"PeriodicalId\":365759,\"journal\":{\"name\":\"2016 IEEE 8th International Memory Workshop (IMW)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 8th International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2016.7495270\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2016.7495270","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

报道了一种基于氧化物的电阻存储器双极开关的全解析紧凑模型。给出了不需要迭代过程的斜坡电压和短电压脉冲情况下开关的解析表达式。将模型结果与实验数据和具有相同物理基础的数值模型进行了比较。

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Fully Analytical Compact Model of OxRAM Based on Joule Heating and Electromigration for DC and Pulsed Operation

A totally analytic compact model of bipolar switching in oxide based resistive memory is reported. Analytical expressions reproducing the switching in the case of ramp voltage and short voltage pulses without any iterative procedure are given. The model results are compared to experimental data and to a numerical model containing the same physical basis.

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2016 IEEE 8th International Memory Workshop (IMW)

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