{"title":"高击穿电压ZnMgO/In-Ga-Zn-O异质结构晶体管","authors":"J. Yamaguchi, I. Soga, T. Iwai","doi":"10.1109/DRC.2011.5994460","DOIUrl":null,"url":null,"abstract":"ZnO-based semiconductors with the wide-band gap have attracted great interest for electronic and optical applications [1]. Among them, an amorphous In-Ga-Zn-O (a-IGZO) has been intensively studied [2,3]. The thin-film transistors using of a-IGZO as an active n-channel layer exhibit good performances such as the high field-effect mobility [μ<inf>FE</inf> ∼ 10 cm<sup>2</sup> (Vs)<sup>−1</sup>], I<inf>on</inf>/I<inf>off</inf> ratio of ∼10<sup>8</sup>, and excellent process stability, even when the channel layer was deposited at room temperature (RT). The band gap of a-IGZO was estimated to E<inf>g</inf> = 3.1–3.4 eV from several spectroscopic techniques [4], which is a promising candidate for high voltage applications such as switching devices for power supplies. Moreover, a-IGZO films have the high uniformity in large area owing to the amorphous character, which results in low-cost fabrication.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High breakdown voltage ZnMgO/In-Ga-Zn-O heterostructure transistors\",\"authors\":\"J. Yamaguchi, I. Soga, T. Iwai\",\"doi\":\"10.1109/DRC.2011.5994460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ZnO-based semiconductors with the wide-band gap have attracted great interest for electronic and optical applications [1]. Among them, an amorphous In-Ga-Zn-O (a-IGZO) has been intensively studied [2,3]. The thin-film transistors using of a-IGZO as an active n-channel layer exhibit good performances such as the high field-effect mobility [μ<inf>FE</inf> ∼ 10 cm<sup>2</sup> (Vs)<sup>−1</sup>], I<inf>on</inf>/I<inf>off</inf> ratio of ∼10<sup>8</sup>, and excellent process stability, even when the channel layer was deposited at room temperature (RT). The band gap of a-IGZO was estimated to E<inf>g</inf> = 3.1–3.4 eV from several spectroscopic techniques [4], which is a promising candidate for high voltage applications such as switching devices for power supplies. Moreover, a-IGZO films have the high uniformity in large area owing to the amorphous character, which results in low-cost fabrication.\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High breakdown voltage ZnMgO/In-Ga-Zn-O heterostructure transistors
ZnO-based semiconductors with the wide-band gap have attracted great interest for electronic and optical applications [1]. Among them, an amorphous In-Ga-Zn-O (a-IGZO) has been intensively studied [2,3]. The thin-film transistors using of a-IGZO as an active n-channel layer exhibit good performances such as the high field-effect mobility [μFE ∼ 10 cm2 (Vs)−1], Ion/Ioff ratio of ∼108, and excellent process stability, even when the channel layer was deposited at room temperature (RT). The band gap of a-IGZO was estimated to Eg = 3.1–3.4 eV from several spectroscopic techniques [4], which is a promising candidate for high voltage applications such as switching devices for power supplies. Moreover, a-IGZO films have the high uniformity in large area owing to the amorphous character, which results in low-cost fabrication.