亚单层InAs量子点vcsel的磁场降低阈值电流和增强输出功率

D. Basu, D. Saha, M. Holub, Z. Mi, C.C. Wu, P. Bhattacharya
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引用次数: 0

摘要

研究了具有非磁性和铁磁性接触的InAs/GaAs自组织量子点(QD)垂直腔面发射激光器(VCSEL)在法拉第几何结构外外加磁场作用下的特性。当磁场处于面外方向时,输出光强显著增强,阈值电流降低。相反,对于面内磁场,几乎没有观察到变化。
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Threshold Current Reduction and Output Power Enhancement with Magnetic Field in Sub-Monolayer InAs Quantum Dot VCSELs
The characteristics of a InAs/GaAs self-organized quantum dot (QD) vertical cavity surface-emitting laser (VCSEL) with both non-magnetic and ferromagnetic (FM) contacts under an externally-applied magnetic field in the Faraday geometry is investigated. Considerable enhancement in output light intensity and threshold current reduction when the magnetic field is in the out-of-plane direction is observed. In contrast, little or no change is observed for an in-plane magnetic field.
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