2018 IEEE电子器件加尔各答会议(EDKCON)国际会议论文集

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Proceedings of International conference on 2018 IEEE Electron Device Kolkata Conference (EDKCON)
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Stability Performance Comparison of a MTJ Memory Device Using Low-Dimensional HfO2, A12O3, La2O3 and h-BN as Composite Dielectric Stress Tuning in NanoScale FinFETs at 7nm Modeling Short Channel Behavior of Proposed Work Function Engineered High-k Gate Stack DG MOSFET with Vertical Gaussian Doping Study of Ag Doped SnO2 Film and its Response Towards Aromatic Compounds Present in Tea Stress Analysis in Uniaxially Strained-SiGe Channel FinFETs at 7N Technology Node
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